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{{Short description|Type of transistor}}
{{refimprove|date=February 2011}}
A '''diffused junction transistor''' is a [[transistor]] formed by diffusing [[dopant]]s into a [[semiconductor]] [[Wafer (electronics)|substrate]]. The diffusion process was developed later than the [[Alloy-junction transistor|alloy
[[Bell Labs]] developed the first prototype diffused junction bipolar transistors in 1954.<ref>[http://semiconductormuseum.com/PhotoGallery/PhotoGallery_Prototype_DiffusedBase.htm Bell Labs Prototype Diffused Base Triode], Transistor Museum, Historic Transistor Photo Gallery.</ref>
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The diffused silicon '''mesa transistor''' was developed at [[Bell Labs]] in 1955 and made commercially available by [[Fairchild Semiconductor]] in 1958.<ref>{{Harvnb|Lécuyer|Brock|2010|pp=10–22}}</ref>
These transistors were the first to have both diffused bases and diffused emitters. Unfortunately, like all earlier transistors, the edge of the collector–base junction was exposed, making it sensitive to leakage through surface contamination, thus requiring [[hermetic seal]]s or [[Passivation (chemistry)|passivation]] to prevent degradation of the transistor's characteristics over time.<ref>{{cite web |url=https://spectrum.ieee.org/semiconductors/design/the-silicon-dioxide-solution |archive-url=https://web.archive.org/web/20110215031520/http://spectrum.ieee.org/semiconductors/design/the-silicon-dioxide-solution |url-status=dead |archive-date=February 15, 2011 |title=The Silicon Dioxide Solution: How physicist Jean Hoerni built the bridge from the transistor to the integrated circuit|author1-link=Michael Riordan (physicist) |first=Michael |last=Riordan |work=IEEE Spectrum |date=December 2007 |access-date=November 28, 2012 |publisher=IEEE}}</ref>
==Planar transistor==
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