Transistor model: Difference between revisions

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{{Short description|Simulation of physical processes taking place in an electronic device}}

{{More footnotes needed|date=January 2015}}

[[Transistor]]s are simple devices with complicated behavior{{cncitation needed|date=November 2022}}. In order to ensure the reliable operation of circuits employing transistors, it is necessary to [[Scientific modelling|scientifically model]] the physical phenomena observed in their operation using '''transistor models'''. There exists a variety of different [[Model (abstract)|models]] that range in complexity and in purpose. Transistor models divide into two major groups: models for device design and models for circuit design.

==Models for device design==

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</ref><ref name=Vasileska>

{{cite book

|author1=Dragica Vasileska|author1-link=Dragica Vasileska |author2=Stephen Goodnick |title=Computational Electronics

|year= 2006

|page=83

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====Physical models====

: These are [[Semiconductor device modeling|models based upon device physics]], based upon approximate modeling of physical phenomena within a transistor.<ref name=":0" /><ref>{{Cite journal |last1=Lui |first1=Basil |last2=Migliorato |first2=P |date=1997-04-01 |title=A new generation-recombination model for device simulation including the Poole-Frenkel effect and phonon-assisted tunnelling |url=https://www.sciencedirect.com/science/article/pii/S0038110196001487 |journal=Solid-State Electronics |language=en |volume=41 |issue=4 |pages=575–583 |doi=10.1016/S0038-1101(96)00148-7 |bibcode=1997SSEle..41..575L |issn=0038-1101|url-access=subscription }}</ref> Parameters<ref>{{Cite journal |last1=Lui |first1=Basil |last2=Tam |first2=S. W. B. |last3=Migliorato |first3=P. |date=1998 |title=A Polysilicon Tft Parameter Extractor |url=https://www.cambridge.org/core/journals/mrs-online-proceedings-library-archive/article/abs/polysilicon-tft-parameter-extractor/AFB82CB806F1140E9249C5FA90285B66 |journal=MRS Online Proceedings Library (OPL) |language=en |volume=507 |pages=365 |doi=10.1557/PROC-507-365 |issn=0272-9172|url-access=subscription }}</ref><ref>{{Cite journal |last1=Kimura |first1=Mutsumi |last2=Nozawa |first2=Ryoichi |last3=Inoue |first3=Satoshi |last4=Shimoda |first4=Tatsuya |last5=Lui |first5=Basil |last6=Tam |first6=Simon Wing-Bun |last7=Migliorato |first7=Piero |date=2001-09-01 |title=Extraction of Trap States at the Oxide-Silicon Interface and Grain Boundary for Polycrystalline Silicon Thin-Film Transistors |url=https://iopscience.iop.org/article/10.1143/JJAP.40.5227/meta |journal=Japanese Journal of Applied Physics |language=en |volume=40 |issue=9R |pages=5227 |doi=10.1143/JJAP.40.5227 |bibcode=2001JaJAP..40.5227K |s2cid=250837849 |issn=1347-4065|url-access=subscription }}</ref> within these models are based upon physical properties such as oxide thicknesses, substrate doping concentrations, carrier mobility, etc.<ref>{{Cite journal |last1=Lui |first1=Basil |last2=Tam |first2=S. W.-B. |last3=Migliorato |first3=P. |last4=Shimoda |first4=T. |date=2001-06-01 |title=Method for the determination of bulk and interface density of states in thin-film transistors |url=https://aip.scitation.org/doi/abs/10.1063/1.1361244 |journal=Journal of Applied Physics |volume=89 |issue=11 |pages=6453–6458 |doi=10.1063/1.1361244 |bibcode=2001JAP....89.6453L |issn=0021-8979|url-access=subscription }}</ref> In the past these models were used extensively, but the complexity of modern devices makes them inadequate for quantitative design. Nonetheless, they find a place in hand analysis (that is, at the conceptual stage of circuit design), for example, for simplified estimates of signal-swing limitations.

====Empirical models====

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==See also==

* [[{{section link|Bipolar junction transistor#|Theory and modeling]]}}

* [[Safe operating area]]

* [[Electronic design automation]]