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{{context|date=January 2020}}
'''Cell''' microprocessors are multi-core processors that use cellular architecture for high performance distributed computing. The first commercial [[Cell microprocessor]], the Cell BE, was designed for the Sony PlayStation 3. IBM designed the PowerXCell 8i for use in the [[Roadrunner supercomputer]].<ref>
Kevin J. Barker, Kei Davis, Adolfy Hoisie, Darren J. Kerbyson, Mike Lang, Scott Pakin, Jose C. Sancho.
[https://www.academia.edu/4460100/Entering_the_petaflop_era_the_architecture_and_performance_of_Roadrunner "Entering the Petaflop Era:The Architecture and Performance of Roadrunner"].
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===First edition Cell on 90 nm CMOS===
IBM has published information concerning two different versions of Cell in this process, an early engineering sample designated ''DD1'', and an enhanced version designated ''DD2'' intended for production.▼
|+ Known Cell variants in 90 nm process
! Designation !! Die area !! First disclosed !! Enhancement
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| DD2 || 235 mm<sup>2</sup> || Cool Chips April 2005 || Enhanced PPE core
|}
▲IBM has published information concerning two different versions of Cell in this process, an early engineering sample designated ''DD1'', and an enhanced version designated ''DD2'' intended for production.
{{clear}}▼
The main enhancement in DD2 was a small lengthening of the die to accommodate a larger PPE core, which is reported to "contain more SIMD/vector execution resources"{{ref|dtwang3}}.
Some preliminary information released by IBM references the DD1 variant. As a result, some early journalistic accounts of the Cell's capabilities now differ from production hardware.
▲{{clear}}
====Cell floorplan====
Powerpoint material accompanying an STI presentation given by Dr Peter Hofstee], includes a photograph of the DD2 Cell die overdrawn with functional unit boundaries which are also captioned by name, which reveals the breakdown of silicon area by function unit as follows:▼
<!-- I wasn't able to square-up the image when measuring dimensions off screen, since I only had area, but not W*H so these are a little more approx. than they might have been; I had W*H for the included SPU but the top four SPU measure differently than the bottom four in the way they overdrew the boundaries, leaving me with the same problem -->
|+ Cell function units and footprint
! Cell function unit !! Area
|-
| XDR interface || {{0}}5.7% || Interface to Rambus system memory
|-
| memory controller || {{0}}4.4% || Manages external memory and L2 cache
|-
| 512 KiB L2 cache || 10.3% || Cache memory for the PPE
|-
| PPE core || 11.1% || PowerPC processor
|-
| test || {{0}}2.0% || Unspecified "test and decode logic"
|-
| EIB || {{0}}3.1% || Element interconnect bus linking processors
|-
| SPE (each) × 8 || {{0}}6.2% || Synergistic coprocessing element
|-
| I/O controller || {{0}}6.6% || External I/O logic
|-
| Rambus FlexIO || {{0}}5.7% || External signalling for I/O pins
|}
▲Powerpoint material accompanying an STI presentation given by Dr Peter Hofstee], includes a photograph of the DD2 Cell die overdrawn with functional unit boundaries which are also captioned by name, which reveals the breakdown of silicon area by function unit as follows:
{{clear}}
====SPE floorplan====
Additional details concerning the internal SPE implementation have been disclosed by IBM engineers, including [[Peter Hofstee]], IBM's chief architect of the synergistic processing element, in a scholarly IEEE publication.{{ref|90nmsoi}}▼
This document includes a photograph of the 2.54 × 5.81 mm SPE, as implemented in 90-nm [[Silicon on Insulator|SOI]]. In this technology, the SPE contains 21 million transistors of which 14 million are contained in arrays (a term presumably designating register files and the local store) and 7 million transistors are logic. This photograph is overdrawn with functional unit boundaries, which are also captioned by name, which reveals the breakdown of silicon area by function unit as follows:▼
<!-- if I had found a way I would have made the table smaller than the surrounding text, esp. if the surrounding text is largish, but that's asking a lot -->
{| class="wikitable" <!-- bad effects at certain Firefox sizings with style="text-align:left" --> align="right" style="
|+ SPU function units and footprint
! SPU function
|-
| single precision || 10.0% || single precision FP execution unit || even
|-
| double precision || {{0}}4.4% || double precision FP execution unit || even
|-
| simple fixed || {{0}}3.25% || fixed point execution unit || even
|-
| issue control || {{0}}2.5% || feeds execution units
|-
| forward macro || {{0}}3.75% || feeds execution units
|-
| GPR || {{0}}6.25% || general purpose register file
|-
| permute || {{0}}3.25% || permute execution unit || odd
|-
| branch || {{0}}2.5% || branch execution unit || odd
|-
| channel || {{0}}6.75% || channel interface (three discrete blocks) || odd
|-
| LS0–LS3 || 30.0% || four 64 KiB blocks of local store || odd
|-
| MMU || {{0}}4.75% || memory management unit
|-
| DMA || {{0}}7.5% || direct memory access unit
|-
| BIU || {{0}}9.0% || bus interface unit
|-
| RTB || {{0}}2.5% || array built-in test block (ABIST)
|-
| ATO || {{0}}1.6% || atomic unit for atomic DMA updates
|-
| HB || {{0}}0.5% || obscure
|}
<!-- OK, I see the method for aligning columns by decimal points in the table help. Not for this chicken. Some diehard can suffer or this can wait until MediaWiki is fixed properly. -->
▲Additional details concerning the internal SPE implementation have been disclosed by IBM engineers, including [[Peter Hofstee]], IBM's chief architect of the synergistic processing element, in a scholarly IEEE publication.{{ref|90nmsoi}}
▲This document includes a photograph of the 2.54 mm × 5.81 mm SPE, as implemented in 90-nm [[Silicon on Insulator|SOI]]. In this technology, the SPE contains 21 million transistors of which 14 million are contained in arrays (a term presumably designating register files and the local store) and 7 million transistors are logic. This photograph is overdrawn with functional unit boundaries, which are also captioned by name, which reveals the breakdown of silicon area by function unit as follows:
Understanding the dispatch pipes is important to write efficient code. In the SPU architecture, two instructions can be dispatched (started) in each clock cycle using dispatch pipes designated ''even'' and ''odd''. The two pipes provide different execution units, as shown in the table above. As IBM partitioned this, most of the arithmetic instructions execute on the ''even'' pipe, while most of the memory instructions execute on the ''odd'' pipe. The permute unit is closely associated with memory instructions as it serves to pack and unpack data structures located in memory into the SIMD multiple operand format that the SPU computes on most efficiently.
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Understanding the limitations of the restrictive two pipeline design is one of the key concepts a programmer must grasp to write efficient SPU code at the lowest level of abstraction. For programmers working at higher levels of abstraction, a good compiler will automatically balance pipeline concurrency where possible.
{{clear}}
====SPE power and performance====
As tested by IBM under a heavy transformation and lighting workload [average IPC of 1.4], the performance profile of this implementation for a single SPU processor is qualified as follows:▼
▲{| class="wikitable" align="right" style="margin: 1em auto 1em auto"
|+ Relationship of speed to temperature
! Voltage
|-
| 0.9 V || 2.0 GHz || {{0}}1 W || 25 °C
|-
| 0.9 V || 3.0 GHz || {{0}}2 W || 27 °C
|-
| 1.0 V || 3.8 GHz || {{0}}3 W || 31 °C
|-
| 1.1 V || 4.0 GHz || {{0}}4 W || 38 °C
|-
| 1.2 V || 4.4 GHz || {{0}}7 W || 47 °C
|-
| 1.3 V || 5.0 GHz || 11 W || 63 °C
|}
▲As tested by IBM under a heavy transformation and lighting workload [average IPC of 1.4], the performance profile of this implementation for a single SPU processor is qualified as follows:
The entry for 2.0 GHz operation at 0.9 V represents a low power configuration. Other entries show the peak stable operating frequency achieved with each voltage increment. As a general rule in CMOS circuits, power dissipation rises in a rough relationship to V{{sup|2}}F, the square of the voltage times the operating frequency.
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IBM has publicly announced their intention to implement Cell on a future technology below the 90 nm node to improve power consumption. Reduced power consumption could ''potentially'' allow the existing design to be boosted to 5 GHz or above without exceeding the thermal constraints of existing products.
{{clear}}
====Cell at 65 nm====
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On 12 March 2007, IBM announced that it started producing 65 nm Cells in its East Fishkill fab. The chips produced there are apparently only for IBMs own Cell [[Computing blade|blade]] servers, which were the first to get the 65 nm Cells. Sony introduced the third generation of the PS3 in November 2007, the 40GB model without PS2-compatibility which was [https://www.engadget.com/2007/10/30/40gb-ps3-features-65nm-chips-lower-power-consumption/ confirmed] to use the 65 nm Cell. Thanks to the shrunk Cell, power consumption was reduced from 200{{nbsp}}W to 135{{nbsp}}W.
At first it was only known that the 65 nm-Cells clock up to 6 GHz and run on 1.3{{nbsp}}V core voltage, as [http://news.spong.com/article/11413?cb=936 demonstrated] on the [[ISSCC]] 2007. This would have given the chip a theoretical peak performance of 384{{nbsp}}GFLOPS in FP8 quarter precision (48{{nbsp}}GFLOPs in FP64 dual precision), a significant improvement to the 204.8{{nbsp}}GFLOPS peak (25.6{{nbsp}}GFLOPs FP64 dual precision) that a 90 nm 3.2 GHz Cell could provide with 8 active SPUs. IBM further announced it implemented new power-saving features and a dual power supply for the SRAM array. This version was not yet the long-rumoured "Cell+" with enhanced Double Precision floating point performance, which first saw the light of day mid-2008 in the [[IBM Roadrunner|Roadrunner supercomputer]] in the form of [[QS22#Cell based
===Future editions in CMOS===
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