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m Fixing broken anchor: #Cell based Blades→most alike anchor IBM BladeCenter#Cell based |
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! Voltage !! Frequency !! Power !! Die Temp.
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| 0.9 V || 2.0 GHz || {{0}}1 W || 25&
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| 0.9 V || 3.0 GHz || {{0}}2 W || 27&
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| 1.0 V || 3.8 GHz || {{0}}3 W || 31&
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| 1.1 V || 4.0 GHz || {{0}}4 W || 38&
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| 1.2 V || 4.4 GHz || {{0}}7 W || 47&
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| 1.3 V || 5.0 GHz || 11 W || 63&
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As tested by IBM under a heavy transformation and lighting workload [average IPC of 1.4], the performance profile of this implementation for a single SPU processor is qualified as follows:
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On 12 March 2007, IBM announced that it started producing 65 nm Cells in its East Fishkill fab. The chips produced there are apparently only for IBMs own Cell [[Computing blade|blade]] servers, which were the first to get the 65 nm Cells. Sony introduced the third generation of the PS3 in November 2007, the 40GB model without PS2-compatibility which was [https://www.engadget.com/2007/10/30/40gb-ps3-features-65nm-chips-lower-power-consumption/ confirmed] to use the 65 nm Cell. Thanks to the shrunk Cell, power consumption was reduced from 200{{nbsp}}W to 135{{nbsp}}W.
At first it was only known that the 65 nm-Cells clock up to 6 GHz and run on 1.3{{nbsp}}V core voltage, as [http://news.spong.com/article/11413?cb=936 demonstrated] on the [[ISSCC]] 2007. This would have given the chip a theoretical peak performance of 384{{nbsp}}GFLOPS in FP8 quarter precision (48{{nbsp}}GFLOPs in FP64 dual precision), a significant improvement to the 204.8{{nbsp}}GFLOPS peak (25.6{{nbsp}}GFLOPs FP64 dual precision) that a 90 nm 3.2 GHz Cell could provide with 8 active SPUs. IBM further announced it implemented new power-saving features and a dual power supply for the SRAM array. This version was not yet the long-rumoured "Cell+" with enhanced Double Precision floating point performance, which first saw the light of day mid-2008 in the [[IBM Roadrunner|Roadrunner supercomputer]] in the form of [[QS22#Cell based
===Future editions in CMOS===
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