Aluminium gallium nitride: Difference between revisions

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{{Short description|Semiconductor material}}

'''Aluminium gallium nitride''' ('''AlGaN''') is a [[semiconductor material]]. It is anany alloy of [[aluminium nitride]] and [[gallium nitride]].

The [[bandgap]] of Al_xGa_1−xN can be tailored from 3.4eV (xAl=0) to 6.2eV (xAl=1).<ref>[http://my.ece.ucsb.edu/Mishra/resgroupfiles/parish.pdf Growth and Characterization of Aluminum Gallium Nitride...]</ref>

AlGaN is used to manufacture [[light emitting diode]]s operating in blue to [[ultraviolet]] region, where wavelengths down to 250 nm (far UV) were achieved. It is also used in blue [[semiconductor laser]]s. It is also used in detectors of ultraviolet radiation, and in AlGaN/GaN [[HEMT]] transistors.

AlGaN is used to manufacture [[light-emitting diode]]s operating in blue to [[ultraviolet]] region, where wavelengths down to 250&nbsp;nm (far UV) were achieved, and some reports down to 222&nbsp;nm.<ref>{{ cite journal |title=222 nm single-peaked deep-UV LED with thin AlGaN quantum well layers |author1=Noguchi Norimichi |author2=Hideki Hirayama |author3=Tohru Yatabe |author4=Norihiko Kamata |journal=Physica Status Solidi C|year=2009 |volume=6 |issue=S2 |pages=S459–S461 |doi=10.1002/pssc.200880923 |bibcode=2009PSSCR...6S.459N |url=https://onlinelibrary.wiley.com/doi/abs/10.1002/pssc.200880923 |url-access=subscription }}</ref> It is also used in blue [[semiconductor laser]]s.

AlGaN is often used together with gallium nitride or aluminium nitride, forming [[heterojunction]]s.

It is also used in detectors of [[ultraviolet]] radiation, and in AlGaN/GaN [[High-electron-mobility transistor]]s.

See also:

* [[Aluminium nitride]]

* [[Gallium nitride]]

AlGaN is often used together with [[gallium nitride]] or [[aluminium nitride]], forming [[heterojunction]]s.

[[Category:Semiconductor materials]]

AlGaN layers are commonly grown on [[Gallium nitride]], on [[sapphire]] or (111) Si, almost always with additional GaN layers.

==Safety and toxicity aspects==

The toxicology of AlGaN has not been fully investigated. The AlGaN dust is an irritant to skin, eyes and lungs. The environment, health and safety aspects of aluminium gallium nitride sources (such as [[trimethylgallium]] and [[ammonia]]) and industrial hygiene monitoring studies of standard [[MOVPE]] sources have been reported recently in a review.<ref>{{ cite journal | title = Environment, Health and Safety Issues for Sources Used in MOVPE Growth of Compound Semiconductors |author1=Shenai-Khatkhate, D. V. |author2=Goyette, R. |author3=DiCarlo, R. L. Jr. |author4=Dripps, G. | journal = Journal of Crystal Growth | volume = 272 | issue = 1–4 | pages = 816–821 | year = 2004 | doi = 10.1016/j.jcrysgro.2004.09.007 |bibcode=2004JCrGr.272..816S }}</ref>

==References==

{{reflist}}

==External links==

*[http://www.semiconductor-today.com/features/PDF/SemiconductorToday_Mar2014-Gallium-nitride.pdf Gallium nitride quantum dots and deep UV light emission.] GaN in AlN

{{DEFAULTSORT:Aluminium Gallium Nitride}}

[[Category:III-V semiconductors]]

[[Category:Aluminium compounds]]

[[Category:Gallium compounds]]

[[Category:Nitrides]]

[[Category:III-V compounds]]

[[Category:SemiconductorLight-emitting diode materials]]