Current injection technique: Difference between revisions

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Latest revision as of 15:33, 14 January 2024

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{{orphan|date=June 2009}}

The '''current injection technique''' is a technique developed to reduce the turn-OFF switching transient of power bipolar [[semiconductor]] devices. It was developed and published by Dr S. Eio of [[Staffordshire University]] ([[United Kingdom]]) in 2007.

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The current injection technique examined in Dr Eio's publications optimize the switching transient of power [[diode]]s, [[thyristor]]s and [[Insulated Gate Bipolar Transistor|insulated gate bipolar transistors]] (IGBTs) without the need of changing the structure of these devices. To implement the current injection technique, [[Electric current|current]] injection circuit was developed with results indicating that the injection of an additional current during its switching transient can reduce the reverse recovery charge of a given power diode and [[Thyristors|thyristor]], and also reduce the tail current of [[Insulated Gate Bipolar Transistor|insulated gate bipolar transistors]].

Practical experimental results on [[diode]]s and [[thyristor]]s showed that the amplitude of the injected current required is proportional to the peak reverse recovery current and proved that these devices experience a momentary increase in recombination of current carriers during the injection of the additional current. This help to prevent the device from conducting large negative current, which in turn reduce its reverse recovery charge and reverse recovery time. Results obtained from experiments with [[insulated gate bipolar transistor|insulated gate bipolar transistors]]s showed a significant reduction in the time where current falls to zero when opposing current was injected into the device during its turn-off transient. Further simulation results from numerical modeling showed that the injected opposing current temporary increase [[Carrier generation and recombination|recombination]] in the device and therefore reduce the extracted excess carriers that stored within the device.

To prevent circuit commutation and bonding between the current injection circuit and the main test circuit where the [[device under test]] (DUT) is connected to, non-invasive circuit was developed to magnetically couple the two circuits.

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{{DEFAULTSORT:Current Injection Technique}}

[[Category:Semiconductors| ]]