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===Ferroelectric RAM===
To date, the only such system to enter widespread production is [[ferroelectric RAM]], or F-RAM (sometimes referred to as FeRAM). F-RAM is a [[random-access memory]] similar in construction to [[Dynamic Random Access Memory|DRAM]] but (instead of a [[dielectric]] layer like in DRAM) contains a thin ferroelectric film of [[lead zirconate titanate]] [{{chem2|Pb(Zr,Ti)O3}}], commonly referred to as PZT. The Zr/Ti atoms in the PZT change polarity in an electric field, thereby producing a binary switch. Unlike RAM devices, F-RAM retains its data memory when power is shut off or interrupted, due to the PZT crystal maintaining polarity. Due to this crystal structure and how it is influenced, F-RAM offers distinct properties from other nonvolatile memory options, including extremely high endurance (exceeding 10<sup>16</sup> access cycles for 3.3 V devices), ultra low power consumption (since F-RAM does not require a charge pump like other non-volatile memories), single-cycle write speeds, and gamma radiation tolerance.<ref>{{cite web|url=http://www.ramtron.com/about-us/what-is-f-ram.aspx |title=F-RAM Memory Technology |website=Ramtron |access-date=2012-06-08 |archive-url=https://web.archive.org/web/20120418102351/http://www.ramtron.com/about-us/what-is-f-ram.aspx |archive-date=2012-04-18}}</ref> [[Ramtron International]] has developed, produced, and licensed [[ferroelectric RAM]] (F-RAM), and other companies that have licensed and produced F-RAM technology include [[Texas Instruments]], [[Rohm]], and [[Fujitsu]].
===Magnetoresistive RAM===
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