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At the same time, the device of the Karlsruhe team of researchers marks the lower limit of [[miniaturization]], as feature sizes smaller than one atom cannot be produced [[Nanolithography|lithographically]]. The device represents a quantum transistor, the conductance of the source-drain channel being defined by the rules of [[quantum mechanics]]. It can be operated at room temperature and at ambient conditions, i.e. neither cooling nor vacuum are required.<ref>{{cite journal | last1=Xie | first1=Fangqing | last2=Maul | first2=Robert | last3=Obermair | first3=Christian | last4=Wenzel | first4=Wolfgang | last5=Schön | first5=Gerd | last6=Schimmel | first6=Thomas | title=Multilevel Atomic-Scale Transistors Based on Metallic Quantum Point Contacts | journal=Advanced Materials | publisher=Wiley | volume=22 | issue=18 | date=2010-02-01 | issn=0935-9648 | doi=10.1002/adma.200902953 | pages=2033–2036| pmid=20544888 | s2cid=28378720 }}</ref>
Few atom transistors have been developed at [[Waseda University]] and at Italian CNR by Takahiro Shinada and Enrico Prati, who observed the Anderson–Mott transition{{clarification needed|date=July 2023}} in miniature by employing arrays of only two, four and six individually implanted [[Arsenic|As]] or [[Phosphorus|P]] atoms.<ref>{{cite journal | last1=Prati | first1=Enrico | last2=Hori | first2=Masahiro | last3=Guagliardo | first3=Filippo | last4=Ferrari | first4=Giorgio | last5=Shinada | first5=Takahiro | title=Anderson–Mott transition in arrays of a few dopant atoms in a silicon transistor | journal=Nature Nanotechnology | publisher=Springer Science and Business Media LLC | volume=7 | issue=7 | year=2012 | issn=1748-3387 | doi=10.1038/nnano.2012.94 | pages=443–447| pmid=22751223 | bibcode=2012NatNa...7..443P }}</ref>
== See also ==
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