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===MOS RAM===
In 1957, Frosch and Derick were able to manufacture the first silicon dioxide field effect transistors at Bell Labs, the first transistors in which drain and source were adjacent at the surface.<ref>{{Cite journal |last=Frosch |first=C. J. |last2=Derick |first2=L |date=1957 |title=Surface Protection and Selective Masking during Diffusion in Silicon |url=https://iopscience.iop.org/article/10.1149/1.2428650 |journal=Journal of The Electrochemical Society |language=en |volume=104 |issue=9 |pages=547 |doi=10.1149/1.2428650}}</ref> Subsequently, a team
This led to the development of [[metal–oxide–semiconductor]] (MOS) memory by John Schmidt at [[Fairchild Semiconductor]] in 1964.<ref name="computerhistory1970" /><ref>{{Cite book |url=https://books.google.com/books?id=kG4rAQAAIAAJ&q=John+Schmidt |title=Solid State Design – Vol. 6 |date=1965 |publisher=Horizon House}}</ref> In addition to higher speeds, MOS [[semiconductor memory]] was cheaper and consumed less power than magnetic core memory.<ref name="computerhistory1970" /> The development of [[silicon-gate]] [[MOS integrated circuit]] (MOS IC) technology by [[Federico Faggin]] at Fairchild in 1968 enabled the production of MOS [[memory chip]]s.<ref>{{cite web |title=1968: Silicon Gate Technology Developed for ICs |url=https://www.computerhistory.org/siliconengine/silicon-gate-technology-developed-for-ics/ |website=[[Computer History Museum]] |access-date=10 August 2019}}</ref> MOS memory overtook magnetic core memory as the dominant memory technology in the early 1970s.<ref name="computerhistory1970" />
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