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The level of the electrical current of the SET can be amplified enough to work with available [[CMOS]] technology by generating a hybrid SET–[[field-effect transistor|FET]] device.<ref name="IonescuMahapatra2004">{{cite journal|last1=Ionescu|first1=A.M.|last2=Mahapatra|first2=S.|last3=Pott|first3=V.|title=Hybrid SETMOS Architecture With Coulomb Blockade Oscillations and High Current Drive|journal=IEEE Electron Device Letters|volume=25|issue=6|year=2004|pages=411–413|issn=0741-3106|doi=10.1109/LED.2004.828558|bibcode=2004IEDL...25..411I|s2cid=42715316}}</ref><ref name="AmatBausells2017">{{cite journal|last1=Amat|first1=Esteve|last2=Bausells|first2=Joan|last3=Perez-Murano|first3=Francesc|title=Exploring the Influence of Variability on Single-Electron Transistors Into SET-Based Circuits|journal=IEEE Transactions on Electron Devices|volume=64|issue=12|year=2017|pages=5172–5180|issn=0018-9383|doi=10.1109/TED.2017.2765003|bibcode=2017ITED...64.5172A|s2cid=22082690}}</ref>
The EU funded, in 2016, project IONS4SET (#688072)<ref>{{cite web|url=http://www.ions4set.eu|title=IONS4SET Website|access-date=2019-09-17}}</ref> looks for the manufacturability of SET–FET circuits operative at room temperature. The main goal of this project is to design a SET-manufacturability process-flow for large-scale operations seeking to extend the use of the hybrid SET–CMOS architectures. To assure room temperature operation, single dots of diameters below 5 nm have to be fabricated and located between source and drain with tunnel distances of a few nanometers.<ref name="KlupfelBurenkov2016">{{cite book|last1=Klupfel|first1=F. J.|title=2016 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)|last2=Burenkov|first2=A.|last3=Lorenz|first3=J.|chapter=Simulation of silicon-dot-based single-electron memory devices|year=2016|pages=237–240|doi=10.1109/SISPAD.2016.7605191|isbn=978-1-5090-0818-6|s2cid=15721282}}</ref> Up to now there is no reliable process-flow to manufacture a hybrid SET–FET circuit operative at room temperature. In this context, this EU project explores a more feasible way to manufacture the SET–FET circuit by using pillar dimensions of approximately 10 nm.<ref name="Xu2019">{{cite
== See also ==
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