Content deleted Content added
review: WP:SOB. rm obvious reason. word choice. |
Citation bot (talk | contribs) Added publisher. | Use this bot. Report bugs. | Suggested by Daisytheduck | #UCB_webform |
||
Line 54:
In 1966, Dr. [[Robert Dennard]] invented invented modern DRAM architecture for which there's a single MOS transistor per capacitor.<ref name="ibm100" /> While examining the characteristics of MOS technology, he found it was capable of building [[capacitor]]s, and that storing a charge or no charge on the MOS capacitor could represent the 1 and 0 of a bit, while the MOS transistor could control writing the charge to the capacitor. This led to his development of a single-transistor DRAM memory cell.<ref name="ibm100"/> In 1967, Dennard filed a patent under IBM for a single-transistor DRAM memory cell, based on MOS technology.<ref name="Robert Dennard"/> The first commercial DRAM IC chip was the [[Intel 1103]], which was [[Semiconductor manufacturing process|manufactured]] on an [[10 μm process|8{{nbsp}}μm]] MOS process with a capacity of 1{{nbsp}}[[Kilobit|kbit]], and was released in 1970.<ref name="computerhistory1970"/><ref name="Lojek-1103"/><ref>{{cite web |first=Mary |last=Bellis |url=http://inventors.about.com/library/weekly/aa100898.htm |title=The Invention of the Intel 1103 |access-date=2015-07-11 |archive-date=2020-03-14 |archive-url=https://web.archive.org/web/20200314061801/http://inventors.about.com/library/weekly/aa100898.htm |url-status=dead }}</ref>
The earliest DRAMs were often synchronized with the CPU clock (clocked) and were used with early microprocessors. In the mid-1970s, DRAMs moved to the asynchronous design, but in the 1990s returned to synchronous operation.<ref>{{cite book |author=P. Darche |url=https://books.google.com/books?id=rLC9zQEACAAJ |title=Microprocessor: Prolegomenes - Calculation and Storage Functions - Calculation Models and Computer |year=2020 |isbn=9781786305633 |page=59| publisher=John Wiley & Sons }}</ref><ref>{{cite book |author1=B. Jacob |url=https://books.google.com/books?id=SrP3aWed-esC |title=Memory Systems: Cache, DRAM, Disk |author2=S. W. Ng |author3=D. T. Wang |publisher=Morgan Kaufmann |year=2008 |isbn=9780080553849 |page=324}}</ref> In 1992 Samsung released KM48SL2000, which had a capacity of 16{{nbsp}}[[Mbit]].<ref name="electronic-design">{{cite journal |title=Electronic Design |journal=[[Electronic Design]] |date=1993 |volume=41 |issue=15–21 |url=https://books.google.com/books?id=QmpJAQAAIAAJ |publisher=Hayden Publishing Company |quote=The first commercial synchronous DRAM, the Samsung 16-Mbit KM48SL2000, employs a single-bank architecture that lets system designers easily transition from asynchronous to synchronous systems.}}</ref><ref>{{cite web |title=KM48SL2000-7 Datasheet |url=https://www.datasheetarchive.com/KM48SL2000-7-datasheet.html |publisher=[[Samsung]] |access-date=19 June 2019 |date=August 1992}}</ref> and mass-produced in 1993.<ref name="electronic-design"/> The first commercial [[DDR SDRAM]] ([[double data rate]] SDRAM) memory chip was Samsung's 64{{nbsp}}Mbit DDR SDRAM chip, released in June 1998.<ref>{{cite news |title=Samsung Electronics Develops First 128Mb SDRAM with DDR/SDR Manufacturing Option |url=https://www.samsung.com/semiconductor/insights/news-events/samsung-electronics-develops-first-128mb-sdram-with-ddr-sdr-manufacturing-option/ |access-date=23 June 2019 |work=[[Samsung Electronics]] |publisher=[[Samsung]] |date=10 February 1999}}</ref> [[GDDR]] (graphics DDR) is a form of DDR [[SGRAM]] (synchronous graphics RAM), which was first released by Samsung as a 16{{nbsp}}Mbit memory chip in 1998.<ref>{{cite news |title=Samsung Electronics Comes Out with Super-Fast 16M DDR SGRAMs |url=https://www.samsung.com/semiconductor/insights/news-events/samsung-electronics-comes-out-with-super-fast-16m-ddr-sgrams/ |access-date=23 June 2019 |work=[[Samsung Electronics]] |publisher=[[Samsung]] |date=17 September 1998}}</ref>
==Types==
| |||