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KMaster888 (talk | contribs) fix citation in connection to transclusion from Synchronous dynamic random-access memory, and ce |
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A second type, DRAM, is based around a capacitor. Charging and discharging this capacitor can store a "1" or a "0" in the cell. However, the charge in this capacitor slowly leaks away, and must be refreshed periodically. Because of this refresh process, DRAM uses more power, but it can achieve greater storage densities and lower unit costs compared to SRAM.
{| style="text-align:center; margin: 1em auto 1em auto"
|[[File:SRAM Cell (6 Transistors).svg|thumb|class=skin-invert|SRAM cell (6 transistors)]]||[[File:DRAM Cell Structure (Model of Single Circuit Cell).PNG|thumb|DRAM cell (1 transistor and one capacitor)]]
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