Electron backscatter diffraction: Difference between revisions

Revision as of 13:31, 27 March 2025

Revision as of 15:25, 24 April 2025

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=== EBSD detectors ===

EBSD is conducted using an SEM equipped with an EBSD detector containing at least a phosphor screen, compact lens and low-light [[Chargecharge-coupled device]] (CCD) or Complementarycomplementary metal–oxide–semiconductor (CMOS) camera. {{As of|2023|09}}, commercially available EBSD systems typically come with one of two different CCD cameras: for fast measurements, the CCD chip has a native resolution of 640×480 pixels; for slower, and more sensitive measurements, the CCD chip resolution can go up to 1600×1200 pixels.<ref name=":19" /><ref name=":0" />

The biggest advantage of the high-resolution detectors is their higher sensitivity, and therefore the information within each diffraction pattern can be analysed in more detail. For texture and orientation measurements, the diffraction patterns are [[Pixel binning|binned]] to reduce their size and computational times. Modern CCD-based EBSD systems can index patterns at a speed of up to 1800 patterns/second. This enables rapid and rich microstructural maps to be generated.<ref name=":20" /><ref name=":15">{{Cite journal |last1=Britton |first1=T. B. |last2=Jiang |first2=J. |last3=Guo |first3=Y. |last4=Vilalta-Clemente |first4=A. |last5=Wallis |first5=D. |last6=Hansen |first6=L. N. |last7=Winkelmann |first7=A. |last8=Wilkinson |first8=A. J. |date=2016 |title=Tutorial: Crystal orientations and EBSD — Or which way is up? |journal=Materials Characterization |volume=117 |pages=113–126 |doi=10.1016/j.matchar.2016.04.008 |s2cid=138070296|doi-access=free |hdl=10044/1/31250 |hdl-access=free }}</ref>