Current injection technique: Difference between revisions

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The '''current injection technique''' was developed and published by Dr S. Eio of Staffordshire University (United Knigdom) in 2007.

The current injection technique was developed and researched to reduce the turn-OFF switching transient of power bipolar [[semiconductor]] devices. The Turn-OFF switching transient of [[Silicon]] based power bipolar semiconductor devices is known to limit the device switching speed and therefore limiting the efficiency of the application it is used within. This turn-OFF switching transient is due to the stored charge in the device during the forward conduction state.

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6.N. Shammas., S. Eio., D. Chamund., “Semiconductor Devices and Their Use in Power Electronic Applications,” World Scientific and Eng. Academy and Society, Venice, Italy, 21 -23 Nov 2007

7.N.Shammas, S.Eio, S.Nathan, K.Shukry, D.Chamund., “Thermal Aspects of Power Semiconductor Devices and Systems,” VII Conference Thermal Problems in Electronics, MicroTherm’07, 24th24 – 28th28 June 2007, Lodz, Poland

[[Category:Semiconductors| ]]