Current injection technique: Difference between revisions

Revision as of 16:51, 16 June 2009

Revision as of 16:52, 16 June 2009

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{{Wikify|date=June 2009}}

The '''current injection technique''' is a technique developed to reduce the turn-OFF switching transient of power bipolar [[semiconductor]] devices. It was developed and published by Dr S. Eio of Staffordshire University (United Knigdom) in 2007.

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The Turn-OFF switching transient of [[Silicon]] based power bipolar semiconductor devices is known to limit the device switching speed and therefore limiting the efficiency of the application it is used within. This turn-OFF switching transient is due to the stored charge in the device during the forward conduction state.

Different techniques such as carrier lifetime control, injection efficiency and buffer layer devices have been used to minimize this, but all result in a trade-OFF between the ON-state loss and the switching speed.

== Details ==

The current injection technique examined in Dr Eio's publications optimize the switching transient of power diodes, thyristors and Insulated Gate Bipolar Transistors (IGBTs) without the need of changing the structure of these devices. To implement the current injection technique, a [[current]] injection circuit was developed with results indicating that the injection of an additional current during its switching transient can reduce the reverse recovery charge of a given power diode and thyristor, and also reduce the tail current of an IGBT.