Current injection technique: Difference between revisions

Revision as of 16:52, 16 June 2009

Revision as of 16:54, 16 June 2009

Line 8:

== Background ==

The Turn-OFF switching transient of [[Silicon]] based power bipolar semiconductor devices, iscaused knownby tostored limitcharge in the device switchingduring speedthe andforward thereforeconduction limitingstate, theis efficiencyknown ofto limit the applicationdevice itswitching is used withinspeed. This in turn-OFF switching transient is due tolimits the storedefficiency charge inof the deviceapplication duringit theis forwardused conduction statewithin.

Different techniques such as carrier lifetime control, injection efficiency and buffer layer devices have been used to minimize this, but all result in a trade-OFFoff between the ON-state loss and the switching speed.

== Details of the Technique ==

The current injection technique examined in Dr Eio's publications optimize the switching transient of power diodes, thyristors and Insulated Gate Bipolar Transistors (IGBTs) without the need of changing the structure of these devices. To implement the current injection technique, a [[current]] injection circuit was developed with results indicating that the injection of an additional current during its switching transient can reduce the reverse recovery charge of a given power diode and thyristor, and also reduce the tail current of an IGBT.