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Practical experimental results on [[Diode|diodes]] and [[Thyristor|thyristors]] showed that the amplitude of the injected current required is proportional to the peak reverse recovery current and proved that these devices experience a momentary increase in recombination of current carriers during the injection of the additional current. This help to prevent the device from conducting large negative current, which in turn reduce its reverse recovery charge and reverse recovery time. Results obtained from experiments with [[insulated gate bipolar transistor]] showed a significant reduction in the time where current falls to zero when opposing current was injected into the device during its turn-off transient. Further simulation results from numerical modeling showed that the injected opposing current temporary increase [[Carrier generation and recombination|recombination]] in the device and therefore reduce the extracted excess carriers that stored within the device.
To prevent circuit commutation and bonding between the current injection circuit and the main test circuit where the [[device under test]] (DUT) is connected to, non-invasive circuit was developed to magnetically couple the two circuits.
In summary, the proposed technique makes it possible to use devices with low forward voltage drop for high frequency applications. This also imply cheaper cost of devices as less processing steps are required during the manufacturing stages where the need of carrier lifetime control techniques are reduced.n test circuit where the Device under Test (DUT) is connected to, a non-invasive circuit was developed to magnetically couple the two circuits. This removed the need for the semiconductor device used in the current injection circuit to have high breakdown voltage rating and also provided electrical isolation. Typical application of this technique in an inductive load chopper circuit showed a significant reduction in the IGBT tail current, and the reverse recovery time and charge of the freewheeling diode used.
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