To prevent circuit commutation and bonding between the current injection circuit and the main test circuit where the [[device under test]] (DUT) is connected to, non-invasive circuit was developed to magnetically couple the two circuits.
In summary, thecurrent proposedinjection technique makes it possible to use devices with low forward voltage drop for high frequency applications. This also imply cheaper cost of devices as less processing steps are required during the manufacturing stages where the need of carrier lifetime control techniques are reduced.n test circuit where the Device under Test (DUT) is connected to, a non-invasive circuit was developed to magnetically couple the two circuits. This removed the need for the semiconductor device used in the current injection circuit to have high breakdown voltage rating and also provided electrical isolation. Typical application of this technique in an inductive load chopper circuit showed a significant reduction in the IGBT tail current of [[Insulated Gate Bipolar Transistor|insulated gate bipolar transistors]], and the reverse recovery time and charge of the freewheeling diode used.
In summary, the proposed technique makes it possible to use devices with low forward voltage drop for high frequency applications. This also imply cheaper cost of devices as less processing steps are required during the manufacturing stages where the need of carrier lifetime control techniques are reduced.
