Dynamic random-access memory: Difference between revisions

Revision as of 12:05, 28 September 2002

Revision as of 13:34, 28 September 2002

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'''DRAM''' is a type of [[random access memory]] that stores each [[bit]] of data in a separate [[capacitor]]. As leakage causes the charge on a capacitor to decay, the capacitors must be refreshed periodically. This makes the circuit more complicated, but the advantage is that capacitors are cheap and small, so high-density, low-power memory chips can be made using this technology. The opposite of DRAM is [[Static Random Access Memory|SRAM]]

=== Special Types of DRAM ===

*extended data out (EDO)

*fast page mode

*synchronous ([[SDRAM]]) or sometimes (SD-RAM)

*[[RAMBUS]] (RDRAM)

*double data rate (DDR)