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Among the more unusual body materials are [[amorphous silicon]], [[polycrystalline silicon]] or other amorphous semiconductors in [[thin-film transistor]]s or [[OFET|organic field effect transistors]] that are based on [[organic semiconductor]]s and often apply organic gate insulators
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The FETs are manufactured using variety of materials as silicon carbide(Sic),gallium arsenide(GaAs),gallium nitride(GaN),indium gallium arsenide(InGaAs).
In June of 2011, IBM announced that it had successfully used [[graphene]] based FETs in an [[integrated circuit]].<ref>http://www.physorg.com/news/2011-06-ibm-graphene-based-circuit.html</ref><ref>http://www.sciencemag.org/content/332/6035/1294</ref> These transistors are capable of a 100 GHz cutoff frequency, much higher than standard silicon FETs <ref>http://arxiv.org/ftp/arxiv/papers/1002/1002.3845.pdf</ref>.
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