Field-effect transistor: Difference between revisions

Revision as of 19:33, 15 September 2011

Revision as of 21:03, 19 September 2011

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* The '''[[DNA field-effect transistor|DNAFET]]''' is a specialized FET that acts as a [[biosensor]], by using a gate made of single-strand DNA molecules to detect matching DNA strands.

* The '''[[FREDFET]]''' (Fast Reverse or Fast Recovery Epitaxial Diode FET) is a specialized FET designed to provide a very fast recovery (turn-off) of the body diode.

* The '''[[HEMT]]''' (High[[high Electronelectron Mobilitymobility Transistortransistor]]), also called a HFET (heterostructure FET), can be made using [[bandgap]] engineering in a ternary semiconductor such as [[AlGaAs]]. The fully depleted wide-band-gap material forms the isolation between gate and body.

* The '''[[IGBT]]''' (Insulated[[insulated-Gategate Bipolarbipolar Transistortransistor]]) is a device for power control. It has a structure akin to a MOSFET coupled with a bipolar-like main conduction channel. These are commonly used for the 200-3000 V drain-to-source voltage range of operation. [[Power MOSFET]]s are still the device of choice for drain-to-source voltages of 1 to 200 V.

*The '''[[ISFET]]''' is(ion-sensitive an Ionfield-Sensitive Field Effecteffect Transistortransistor) used to measure ion concentrations in a solution; when the ion concentration (such as H⁺, see [[pH electrode]]) changes, the current through the transistor will change accordingly.

* The '''[[JFET]]''' (Junctionjunction Fieldfield-Effecteffect Transistortransistor) uses a reverse biased p-n junction to separate the gate from the body.

* The '''[[MESFET]]''' (Metal–Semiconductor Field-Effect Transistor) substitutes the [[p-n junction]] of the JFET with a [[Schottky barrier]]; used in GaAs and other III-V semiconductor materials.

* The '''[[MODFET]]''' (Modulation-Doped Field Effect Transistor) uses a [[quantum well]] structure formed by graded doping of the active region.