Revision as of 17:20, 20 October 2011 edit PrathameshD.elec (talk \| contribs) 119 edits →Types of field-effect transistors ← Previous edit		Revision as of 19:25, 30 October 2011 edit undo Xhienne (talk \| contribs) Extended confirmed users, Pending changes reviewers 4,363 edits →Basic information: subscript Next edit →
Line 26: </ref> * Source (S), through which the majority carriers enter the channel. Conventional current entering the channel at S is designated by ISI<sub>S</sub>. * Drain (D), through which the majority carriers leave the channel. Conventional current entering the channel at D is designated by IDI<sub>D</sub>. Drain to Source voltage is ~~VDS~~V<sub>DS</sub>. * Gate (G), the terminal that modulates the channel conductivity. By applying voltage to G, one can control IDI<sub>D</sub>. == More about terminals ==

Field-effect transistor: Difference between revisions