Optical modulators using semiconductor nano-structures: Difference between revisions

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- {{Mergeto|Optical modulator|date=June 2009}} no discussion at talk page or at Talk:Optical modulator about merging
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m clean up, typos fixed: 40 Gb/s → 40 Gbit/s (2) using AWB
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[[Optical modulators]] can be implemented using Semiconductor Nano-structures to increase the performance like high operation, high stability, high speed response, and highly compact system. Highly compact [[electro-optical modulators]] have been demonstrated in compound semiconductors.<ref>Sadagopan, T., Choi, S. J., Dapkus, P. D. & Bond, A. E. Digest of the LEOS Summer Topical Meetings MC2–-3 (IEEE, Piscataway, New Jersey (2004)</ref> However, in [[silicon photonics]], electro-optical modulation has been demonstrated only in large structures, and is therefore inappropriate for effective on-chip
integration. Electro-optical control of light on [[silicon]] is challenging owing to its weak electro-optical properties. The large dimensions of previously demonstrated structures were necessary to achieve a significant modulation of the transmission in spite of the small change of refractive index of silicon. Liu et al. have recently demonstrated a high-speed silicon [[optical modulator]] based on a metal–oxide–semiconductor (MOS) configuration.<ref>Liu, A. et al. Nature 427, 615–618 (2004)</ref>. Their work showed a high-speed optical active device on silicon—acritical milestone towards [[optoelectronic]] integration on silicon.
 
=== Electro-optic modulator of nano-structures ===
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This device was fabricated a shape of the p-i-n ring resonator on a [[silicon-on-insulator]] substrate with a 3-mm-thick buried oxide layer. Both the waveguide coupling to the ring and that forming the ring have awidth of 450&nbsp;nm and a height of 250&nbsp;nm. The diameter of the ring is 12&nbsp;mm, and the spacing between the ring and the straight waveguide is 200&nbsp;nm.
 
=== Acousto-optic modulator of nano-structures ===
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== Applications and Commercial products ==
 
=== Electro-optic modulator ===
 
* from THORLABS
 
40 GbGbit/s Phase Modulator
The 40 GbGbit/s Phase Modulator is a high performance, low drive voltage External Optical Modulator designed for customers developing next generation 40G transmission systems. The increased bandwidth allows for chirp control in high-speed data communications.
Applications ; Chirp Control for High-Speed Communications (SONET OC-768 Interfaces, SDH STM-256 Interfaces), Coherent communications, C & L Band Operation, Optical Sensing, All-optical frequency shifting.
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== References ==
{{reflist|2}}
 
{{DEFAULTSORT:Optical Modulators Using Semiconductor Nano-Structures}}
[[Category:Optical devices]]
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[[Category:Nanotechnology]]
[[Category:Materials science]]
 
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