Channel length modulation: Difference between revisions

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Revision as of 02:24, 24 March 2015

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==Shichman–Hodges model {{anchor|Shichman-Hodges model|Shichman–Hodges model|Shichman-Hodges|Shichman–Hodges}}==

In textbooks, channel length modulation in [[MOSFET#Modes of operation|active mode]] usually is described using the Shichman–Hodges model, accurate only for old technology:<ref>[http://web.archive.org/web/20120617082916/http://www.nanodottek.com/NDT14_08_2007.pdf NanoDotTek Report NDT14-08-2007, 12 August 2007]</ref>

where <math>I_D</math> = drain current, <math> K'_n </math> =

technology parameter sometimes called the transconductance coefficient, ''W ,L'' = MOSFET width and length, <math>V_{GS}</math> = gate-to-source voltage, <math>V_{th}</math> =[[threshold voltage]], <math>V_{DS}</math> = drain-to-source voltage, <math>V_{DS,sat} = V_{GS} - V_{th}</math>, and λ = '''channel-length modulation''' parameter.