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==Shichman–Hodges model {{anchor|Shichman-Hodges model|Shichman–Hodges model|Shichman-Hodges|Shichman–Hodges}}==
In textbooks, channel length modulation in [[MOSFET#Modes of operation|active mode]] usually is described using the Shichman–Hodges model, accurate only for old technology:<ref>
where <math>I_D</math> = drain current, <math> K'_n </math> =
technology parameter sometimes called the transconductance coefficient, ''W ,L'' = MOSFET width and length, <math>V_{GS}</math> = gate-to-source voltage, <math>V_{th}</math> =[[threshold voltage]], <math>V_{DS}</math> = drain-to-source voltage, <math>V_{DS,sat} = V_{GS} - V_{th}</math>, and λ = '''channel-length modulation''' parameter.
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