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In the Shichman–Hodges model used above, output resistance is given as:
::<math>\begin{align}
r_O &= \frac{1 + \lambda V_{DS}}{\lambda I_D} \\
&= \frac{1/\lambda + V_{DS}}{I_D} \\
&= \frac{V_E L + V_{DS}}{I_D}
\end{align}</math>
where <math>V_{DS}</math> = drain-to-source voltage, <math>I_D</math> = drain current and <math>\lambda</math> = channel-length modulation parameter. Without channel-length modulation (for λ = 0), the output resistance is infinite. The channel-length modulation parameter usually is taken to be inversely proportional to MOSFET channel length ''L'', as shown in the last form above for ''r<sub>O</sub>'':<ref name=Sansen>
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