Dynamic random-access memory: Difference between revisions

Revision as of 05:44, 11 November 2004

Revision as of 05:46, 11 November 2004

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'''DRAM''' is a type of [[random access memory]] that stores each [[bit]] of data in a separate [[capacitor]]. The amount of electric charge stored in the capacitor determines whether the bit is considered 1 or 0. As leakage causes the charge on a capacitor to decay, the information gets lost eventually, unless the charge is refreshed periodically. Since ThisDRAM putscannot DRAMhold its data with a periodic injection of energy it is in the class of ''volatile'' memory devices.

[[Image:square_array_of_mosfet_cells_read.png|thumb|left|200px|Principle of operation of DRAM read, for simple 4 by 4 array.]]