Depletion-load NMOS logic: Difference between revisions

Revision as of 04:51, 23 July 2019

Revision as of 16:23, 30 July 2019

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==History and background==

Following the invention of the [[MOSFET]] by [[Mohamed Atalla]] and [[Dawon Kahng]] at [[Bell Labs]] in 1959, they demonstrated MOSFET technology in 1960.<ref name="computerhistory">{{cite journal|url=https://www.computerhistory.org/siliconengine/metal-oxide-semiconductor-mos-transistor-demonstrated/|title=1960 - Metal Oxide Semiconductor (MOS) Transistor Demonstrated|journal=The Silicon Engine|publisher=[[Computer History Museum]]}}</ref> They [[Semiconductor device fabrication|fabricated]] both pMOS and nMOS devices with a 25[[10 µm process|20{{nbsp}}[[µm]] process]]. However, the nMOS devices were impractical, and only the pMOS type were practical working devices.<ref name="Lojek">{{cite book |last1=Lojek |first1=Bo |title=History of Semiconductor Engineering |date=2007 |publisher=[[Springer Science & Business Media]] |isbn=9783540342588 |pages=321-3}}</ref> A more practical NMOS process was developed several years later.

===Silicon gate===