Single-electron transistor: Difference between revisions

Revision as of 07:40, 19 September 2019

Revision as of 08:02, 19 September 2019

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As mentioned in bullet 2 in the list above: the electrostatic charging energy must be greater than <math>k_{\rm B} T</math> to prevent thermal fluctuations affecting the [[Coulomb blockade]]. This in turn implies that the maximum allowed island capacitance is inversely proportional to the temperature, and needs to be below 1 aF to make the device operational at room temperature.

The island capacitance is a function of the QD size, and a QD <=diameter smaller than 310 nm is preferrablepreferable when aiming for operation at room temperature. This in turn puts huge restraints on the manufacturability of integrated circuits because of reproducability issues.

=== CMOS compatibility ===