Single-electron transistor: Difference between revisions

Revision as of 11:04, 7 February 2020

Revision as of 16:23, 11 February 2020

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At zero temperatures, only transitions with negative free energy are allowed: <math>\Delta F_{\rm S} < 0</math> or <math>\Delta F_{\rm D} < 0</math>. These conditions can be used to find areas of stability in the plane <math>V_{\rm bias} - V_{\rm G}.</math>

With increasing voltage at the gate electrode, when the supply voltage is maintainted below the voltage of the Coulomb blockade (i.e. <math>V_{\rm bias} < \tfrac{e}{C_{\rm S} + C_{\rm D}}</math>), the drain output current will oscillate with a period <math>\tfrac{e}{C_{\rm S} + C_{\rm D}}.</math> These areas correspond to failures in the field of stability. It should be noted here that theThe oscillations of the tunnelling current occur in time, and the oscillations in two series-connected junctions have a periodicity in the gate control voltage. The thermal broadening of the oscillations increases to a large extent with increasing temperature.

=== Temperature dependence ===