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===Others===
A number of more esoteric devices have been proposed, including [[Nano-RAM]] based on [[Carbon nanotube|carbon nanotube technology]], but these are currently far from commercialization. The advantages that nanostructures such as [[quantum dots]], [[carbon nanotubes]] and [[nanowires]] offer over their silicon-based predecessors include their tiny size, speed and their density. Several concepts of molecular-scale memory devices have been developed recently. Research has also been done in designing [[racetrack memory]], also called ___domain wall memory.<ref name="stap16dwm">{{Cite journal |url=https://www.academia.edu/28267727 |doi=10.1145/2994550|title=A Survey of Techniques for Architecting Processor Components Using Domain-Wall Memory|journal=ACM Journal on Emerging Technologies in Computing Systems|volume=13|issue=2|pages=1–25|last1=Mittal|first1=Sparsh|year=2016|doi-access=free}}</ref> Also seeing renewed interest is silicon-oxide-nitride-oxide-silicon ([[SONOS]]) memory.
==See also==
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