Diffused junction transistor: Difference between revisions

Revision as of 20:37, 21 May 2020

Revision as of 16:18, 16 January 2021

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The diffused silicon '''mesa transistor''' was developed at [[Bell Labs]] in 1955 and made commercially available by [[Fairchild Semiconductor]] in 1958.<ref>{{Harvnb|Lécuyer|Brock|2010|pp=10–22}}</ref>

These transistors were the first to have both diffused bases and diffused emitters. Unfortunately, like all earlier transistors, the edge of the collector–base junction was exposed, making it sensitive to leakage through surface contamination, thus requiring [[hermetic seal]]s or [[Passivation (chemistry)|passivation]] to prevent degradation of the transistor's characteristics over time.<ref>{{cite web |url=https://spectrum.ieee.org/semiconductors/design/the-silicon-dioxide-solution |title=The Silicon Dioxide Solution: How physicist Jean Hoerni built the bridge from the transistor to the integrated circuit |first=Michael |last=Riordan |work=IEEE Spectrum |date=December 2007 |accessdateaccess-date=November 28, 2012 |publisher=IEEE}}</ref>

==Planar transistor==