Multi-level cell: Difference between revisions

Revision as of 15:23, 30 April 2021

Revision as of 02:10, 6 May 2021

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Typically, as the 'level' count increases, performance (speed and reliability) and consumer cost decrease; however this correlation can vary between manufacturers.

Examples of MLC memories are MLC [[NAND flash]], MLC PCM (phase change memory), etc. For example, in SLC NAND flash technology, each cell can exist in one of the two states, storing one bit of information per cell. Most MLC NAND [[flash memory]] has four possible states per cell, so it can store two bits of information per cell. This reduces the amount of margin separating the states and results in the possibility of more errors. Multi-level cells which are designed for low error rates are sometimes called '''enterprise MLC''' ('''eMLC'''). There are tools for modeling the area, latency, and energy of MLC memories.<ref>"[https://www.academia.edu/34545611/DESTINY_A_Comprehensive_Tool_with_3D_and_Multi-Level_Cell_Memory_Modeling_Capability DESTINY: A Comprehensive Tool with 3D and Multi-level Cell Memory Modeling Capability]", Mittal et al., JLPEA, 2017 </ref>

New technologies, such as multi-level cells and 3D Flash, and increased production volumes will continue to bring prices down.<ref>{{cite web |url=https://www.hyperstone.com/en/NAND-Flash-is-displacing-hard-disk-drives-1249,12728.html |title=NAND Flash is Displacing Hard Disk Drives |access-date=29 May 2018 }}</ref>