A '''Tripletriple-level Level Cellcell''' ('''TLC''') is a type of [[NAND flash]] memory that stores three 3 bits of information per cell. [[Toshiba]] introduced memory with triple-level cells in 2009.<ref name="toshiba2009">{{cite news |title=Toshiba Makes Major Advances in NAND Flash Memory with 3-bit-per-cell 32nm generation and with 4-bit-per-cell 43nm technology |url=http://www.toshiba.co.jp/about/press/2009_02/pr1102.htm |access-date=21 June 2019 |work=[[Toshiba]] |date=11 February 2009}}</ref>
[[Samsung]] announced a type of NAND flash that stores three 3 bits of information per cell, with eight 8 total voltage states (values or levels), coining the term "Tripletriple-level Level Cellcell" ("TLC"). [[Samsung Electronics]] began mass-producing it in 2010,<ref name="samsung-history">{{cite web |title=History |url=https://www.samsung.com/us/aboutsamsung/company/history/ |website=[[Samsung Electronics]] |publisher=[[Samsung]] |access-date=19 June 2019}}</ref> and it was first seen in Samsung's 840 Series [[Solid-state drive|SSDs]].<ref>{{Cite web |url=http://www.samsung.com/global/business/semiconductor/minisite/SSD/uk/html/about/MlcNandFlash.html |title=Samsung SSD 840 Series -– 3BIT/MLC NAND Flash |access-date=2013-04-10 |archive-url=https://web.archive.org/web/20130410070908/http://www.samsung.com/global/business/semiconductor/minisite/SSD/uk/html/about/MlcNandFlash.html |archive-date=2013-04-10 |url-status=live }}</ref> Samsung refers to this technology as 3-bit MLC. The negative aspects of MLC are amplified with TLC, but TLC benefits from still higher storage density and lower cost.<ref>{{cite web |url=http://www.anandtech.com/show/6459/samsung-ssd-840-testing-the-endurance-of-tlc-nand |title=Samsung SSD 840: Testing the Endurance of TLC NAND |publisher=AnandTech |date=2012-11-16 |access-date=2014-04-05}}</ref>
In 2013, Samsung introduced [[V-NAND]] (Vertical NAND, also known as 3D NAND) with triple-level cells, which had a memory capacity of 128{{nbsp}}[[Gibibit|GbGbit]].<ref name="tomshardware">{{cite news |title=Samsung Mass Producing 128Gb 3-bit MLC NAND Flash |url=https://www.tomshardware.co.uk/NAND-128Gb-Mass-Production-3-bit-MLC,news-43458.html |access-date=21 June 2019 |work=[[Tom's Hardware]] |date=11 April 2013}}</ref> They expanded their TLC V-NAND technology to 256{{nbsp}}GbGbit memory in 2015,<ref name="samsung-history"/> and 512{{nbsp}}GbGbit in 2017.<ref name="anandtech-samsung">{{cite news |last1=Shilov |first1=Anton |title=Samsung Starts Production of 512 GB UFS NAND Flash Memory: 64-Layer V-NAND, 860 MB/s Reads |url=https://www.anandtech.com/show/12120/samsung-starts-production-of-512-gb-ufs-chips |access-date=23 June 2019 |work=[[AnandTech]] |date=December 5, 2017}}</ref>
