Non-volatile random-access memory: Difference between revisions

Revision as of 17:41, 28 November 2021

Revision as of 17:45, 28 November 2021

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==Newer approaches==

Flash and EEPROM's limited write-cycles are a serious problem for any real RAM-like role, however. In addition, the high power needed to write the cells is a problem in low-power roles, where NVRAM is often used. The power also needs time to be "built up" in a device known as a [[charge pump]], which makes writing dramatically slower than reading, often as much as 1,000 times. A number of new memory devices have been proposed to address these shortcomings.

===Ferroelectric RAM===