Single-electron transistor: Difference between revisions

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Revision as of 15:17, 17 November 2022

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[[File:SET schematic2.jpg|thumb|Schematic of a basic SET and its internal electrical components]]

A '''single-electron transistor''' ('''SET''') is a sensitive electronic device based on the [[Coulomb blockade]] effect. In this device the electrons flow through a tunnel junction between source/drain to a [[quantum dot]] (conductive island). Moreover, the electrical potential of the island can be tuned by a third electrode, known as the gate, which is capacitively coupled to the island. The conductive island is sandwiched between two tunnel junctions,<ref>{{cite journal|last1=Mahapatra|first1=S.|last2=Vaish|first2=V.|last3=Wasshuber|first3=C.|last4=Banerjee|first4=K.|last5=Ionescu|first5=A.M.|title=Analytical Modeling of Single Electron Transistor for Hybrid CMOS-SET Analog IC Design|journal=IEEE Transactions on Electron Devices|volume=51|issue=11|year=2004|pages=1772–1782|issn=0018-9383|doi=10.1109/TED.2004.837369|bibcode=2004ITED...51.1772M|s2cid=15373278}}</ref> which are modeled by a capacitorcapacitors, (<math>C_{\rm D}</math> and <math>C_{\rm S}</math>), and a resistor, (<math>R_{\rm D}</math> and <math>R_{\rm S}</math>), in parallel.

== History ==