: These are [[Semiconductor device modeling|models based upon device physics]], based upon approximate modeling of physical phenomena within a transistor.<ref name=":0" /><ref>{{Cite journal |last=Lui |first=Basil |last2=Migliorato |first2=P |date=1997-04-01 |title=A new generation-recombination model for device simulation including the Poole-Frenkel effect and phonon-assisted tunnelling |url=https://www.sciencedirect.com/science/article/pii/S0038110196001487 |journal=Solid-State Electronics |language=en |volume=41 |issue=4 |pages=575–583 |doi=10.1016/S0038-1101(96)00148-7 |issn=0038-1101}}</ref>. Parameters<ref>{{Cite journal |last=Lui |first=Basil |last2=Tam |first2=S. W. B. |last3=Migliorato |first3=P. |date=1998 |title=A Polysilicon Tft Parameter Extractor |url=https://www.cambridge.org/core/journals/mrs-online-proceedings-library-archive/article/abs/polysilicon-tft-parameter-extractor/AFB82CB806F1140E9249C5FA90285B66 |journal=MRS Online Proceedings Library (OPL) |language=en |volume=507 |pages=365 |doi=10.1557/PROC-507-365 |issn=0272-9172}}</ref><ref>{{Cite journal |last=Kimura |first=Mutsumi |last2=Nozawa |first2=Ryoichi |last3=Inoue |first3=Satoshi |last4=Shimoda |first4=Tatsuya |last5=Lui |first5=Basil |last6=Tam |first6=Simon Wing-Bun |last7=Migliorato |first7=Piero |date=2001-09-01 |title=Extraction of Trap States at the Oxide-Silicon Interface and Grain Boundary for Polycrystalline Silicon Thin-Film Transistors |url=https://iopscience.iop.org/article/10.1143/JJAP.40.5227/meta |journal=Japanese Journal of Applied Physics |language=en |volume=40 |issue=9R |pages=5227 |doi=10.1143/JJAP.40.5227 |issn=1347-4065}}</ref> within these models are based upon physical properties such as oxide thicknesses, substrate doping concentrations, carrier mobility, etc.<ref>{{Cite journal |last=Lui |first=Basil |last2=Tam |first2=S. W.-B. |last3=Migliorato |first3=P. |last4=Shimoda |first4=T. |date=2001-06-01 |title=Method for the determination of bulk and interface density of states in thin-film transistors |url=https://aip.scitation.org/doi/abs/10.1063/1.1361244 |journal=Journal of Applied Physics |volume=89 |issue=11 |pages=6453–6458 |doi=10.1063/1.1361244 |issn=0021-8979}}</ref>. In the past these models were used extensively, but the complexity of modern devices makes them inadequate for quantitative design. Nonetheless, they find a place in hand analysis (that is, at the conceptual stage of circuit design), for example, for simplified estimates of signal-swing limitations.
