Samsung Exynos: differenze tra le versioni
Contenuto cancellato Contenuto aggiunto
Riga 122:
| LPDDR2
| 2010
| [[Samsung Galaxy S]]
|-
| style="text-align:center" | '''Exynos<br />3 Quad'''<br />(3470)<ref>{{cita web|url=https://www.samsung.com/semiconductor/minisite/exynos/products/mobileprocessor/exynos-3-quad-3470/|titolo= Exynos 3 Single (3470)|lingua=en-US}}</ref>
Riga 131:
| LPDDR3
|
| [[Samsung Galaxy Light]]
|-
| style="text-align:center" | '''Exynos<br />4 Dual'''<br />(4210)<ref>{{cita web|url=https://www.samsung.com/semiconductor/minisite/exynos/products/mobileprocessor/exynos-4-dual-4210/|titolo= Exynos 4 Dual (4210)|lingua=en-US}}</ref>
Riga 140:
| LPDDR2
| 2011
| [[Samsung Galaxy S II]]
|-
| style="text-align:center" | '''Exynos<br />4 Dual'''<br />(4212)<ref>{{cita web|url=https://www.samsung.com/semiconductor/minisite/exynos/products/mobileprocessor/exynos-4-dual-4212/|titolo= Exynos 4 Dual (4212)|lingua=en-US}}</ref>
Riga 149:
| LPDDR2
| 2011
| [[Samsung Galaxy Tab 3]]
|-
| style="text-align:center" | '''Exynos<br />4 Quad'''<br />(4412)<ref>{{cita web|url=https://www.samsung.com/semiconductor/minisite/exynos/products/mobileprocessor/exynos-4-quad-4412/|titolo= Exynos 4 Dual (4412)|lingua=en-US}}</ref>
Riga 158:
| LPDDR2
| 2012
| [[Samsung Galaxy S III]]
|-
| style="text-align:center" | '''Exynos<br />4 Quad'''<br />(4415)
Riga 187:
| rowspan="2" | 32-bit dual-channel 933 MHz LPDDR3e (14.9 GB/sec)
| rowspan="2" | 2013
| rowspan="2" | [[Samsung Galaxy S4]]<br
|-
| style="text-align:center; background:#EAEAFF" | 4 × 1,20 GHz<br /><span style="font-size:92%">([[ARM Cortex|ARM Cortex-A7]])</span>
Riga 213:
| rowspan="2" | 32-bit dual-channel 933 MHz LPDDR3/DDR3 (14.9 GB/sec)
| rowspan="2" | Q2 2014
| rowspan="2" | [[Samsung Galaxy S5]]
|-
| style="text-align:center; background:#EAEAFF" | 4 × 1,40 GHz<br /><span style="font-size:92%">([[ARM Cortex|ARM Cortex-A7]])</span>
Riga 226:
| rowspan="2" | 32-bit dual-channel 800 MHz LPDDR3 (12.8 GB/sec)
| rowspan="2" | Q2 2014
| rowspan="2" | [[Samsung Galaxy Note 3 Neo]]
|-
| style="text-align:center; background:#EAEAFF" | 4 × 1,30 GHz<br /><span style="font-size:92%">([[ARM Cortex|ARM Cortex-A7]])</span>
Riga 252:
| rowspan="2" | 32-bit dual-channel 1066 MHz LPDDR3e/DDR3 (17.0 GB/sec)
| rowspan="2" | Q3 2014
| rowspan="2" | [[Samsung Galaxy Alpha]] (SM-G850F)
|-
| style="text-align:center; background:#EAEAFF" | 4 × 1,40 GHz<br /><span style="font-size:92%">([[ARM Cortex|ARM Cortex-A7]])</span>
Riga 265:
| rowspan="2" | 32-bit dual-channel 825 MHz LPDDR3 (13.2 GB/sec)
| rowspan="2" | Q4 2014
| rowspan="2" | [[Samsung Galaxy Note 4]]
|-
| style="text-align:center; background:#EAEAFF" | 4 × 1,30 GHz<br /><span style="font-size:92%">([[ARM Cortex|ARM Cortex-A53]])</span>
Riga 278:
| rowspan="2" | 32-bit dual-channel 1552 MHz LPDDR4 (24.88 GB/s)
| rowspan="2" | Q2 2015
| rowspan="2" | [[Samsung Galaxy S6]]
|-
| style="text-align:center; background:#EAEAFF" | 4 × 1,50 GHz<br /><span style="font-size:92%">([[ARM Cortex|ARM Cortex-A53]])</span>
Riga 291:
| rowspan="2" | 32-bit dual-channel 1794 MHz LPDDR4 (28.7 GB/s)
| rowspan="2" | Q2 2016
| rowspan="2" | [[Samsung Galaxy S7]]
|-
| style="text-align:center; background:#EAEAFF" | 4 × 1,60 GHz<br /><span style="font-size:92%">([[ARM Cortex|ARM Cortex-A53]])</span>
Riga 304:
| rowspan="2" | 32-bit dual-channel 1794 MHz LPDDR4x (28.7 GB/s)
| rowspan="2" | Q2 2017
| rowspan="2" | [[Samsung Galaxy S8]]
|-
| style="text-align:center; background:#EAEAFF" | 4 × 1,70 GHz<br /><span style="font-size:92%">([[ARM Cortex|ARM Cortex-A53]])</span>
Riga 317:
| rowspan="2" | 64-bit quad-channel 1794 MHz LPDDR4x (28.7 GB/s)
| rowspan="2" | Q1 2018
| rowspan="2" | [[Samsung Galaxy S9]]
|-
| style="text-align:center; background:#EAEAFF" | 4 × 1,90 GHz<br /><span style="font-size:92%">([[ARM Cortex|ARM Cortex-A55]])</span>
Riga 330:
| rowspan="3" | 64-bit quad-channel 1794 MHz LPDDR4x (28.7 GB/s)
| rowspan="3" | Q1 2019
| rowspan="3" | [[Samsung Galaxy
|-
| style="text-align:center; background:#FEE0C0" | 2 × 2,30 GHz<br /><span style="font-size:92%">([[ARM Cortex|ARM Cortex-A75]])</span>
|-
| style="text-align:center; background:#EAEAFF" | 4 × 1,90 GHz<br /><span style="font-size:92%">([[ARM Cortex|ARM Cortex-A55]])</span>
|-
| colspan="8" |
|-
| style="text-align:center" rowspan="3" | '''Exynos<br />9825<ref>{{cita web|url=https://www.samsung.com/semiconductor/minisite/exynos/products/mobileprocessor/exynos-9825/|titolo= Exynos 9825|lingua=en-US}}</ref>
| rowspan="3" | 8 nm<br />(LPE)
| rowspan="3" | ARMv8.2-A
| style="text-align:center; background:#FEE0C0" | 2 × 2,70 GHz<br /><span style="font-size:92%">(Mongoose M4)</span>
| rowspan="3" | [[ARM Holdings|ARM]] [[Mali (GPU)|Mali-G76 MP12]]<br />702 MHz<br />(607 GFLOPS)
| rowspan="3" | 64-bit quad-channel 1794 MHz LPDDR4x (28.7 GB/s)
| rowspan="3" | Q1 2019
| rowspan="3" | [[Samsung Galaxy Note 10]]<br />[[Samsung Galaxy Note 10+]]
|-
| style="text-align:center; background:#FEE0C0" | 2 × 2,30 GHz<br /><span style="font-size:92%">([[ARM Cortex|ARM Cortex-A75]])</span>
|-
| style="text-align:center; background:#EAEAFF" | 4 × 1,90 GHz<br /><span style="font-size:92%">([[ARM Cortex|ARM Cortex-A55]])</span>
|-
| colspan="8" |
|-
| style="text-align:center" rowspan="2" | '''Exynos<br />980<ref>{{cita web|url=https://www.samsung.com/semiconductor/minisite/exynos/products/mobileprocessor/exynos-980/|titolo= Exynos 980|lingua=en-US}}</ref>
| rowspan="2" | 8 nm<br />(LPE)
| rowspan="2" | ARMv8.2-A
| style="text-align:center; background:#FEE0C0" | 2 × 2,20 GHz<br /><span style="font-size:92%">([[ARM Cortex|ARM Cortex-A77]])</span>
| rowspan="2" | [[ARM Holdings|ARM]] [[Mali (GPU)|Mali-G76 MP5]]
| rowspan="2" | 64-bit quad-channel 1794 MHz LPDDR4x (28.7 GB/s)
| rowspan="2" |
| rowspan="2" | [[Samsung Galaxy A71]] (5G)<br />[[Samsung Galaxy A51]] (5G)<br />[[Vivo S6]] (5G)<br />[[Vivo X30 Pro]]
|-
| style="text-align:center; background:#EAEAFF" | 6 × 1,80 GHz<br /><span style="font-size:92%">([[ARM Cortex|ARM Cortex-A55]])</span>
|-
| colspan="8" |
|-
| style="text-align:center" rowspan="3" | '''Exynos<br />990<ref>{{cita web|url=https://www.samsung.com/semiconductor/minisite/exynos/products/mobileprocessor/exynos-990/|titolo= Exynos 990|lingua=en-US}}</ref>
| rowspan="3" | 7 nm<br />(LPE)
| rowspan="3" | ARMv8.2-A
| style="text-align:center; background:#FEE0C0" | 2 × 2,73 GHz<br /><span style="font-size:92%">(Mongoose M5)</span>
| rowspan="3" | [[ARM Holdings|ARM]] [[Mali (GPU)|Mali-G77 MP11]]
| rowspan="3" | LPDDR5
| rowspan="3" |
| rowspan="3" | [[Samsung Galaxy S20]]<br />[[Samsung Galaxy S20+]]<br />[[Samsung Galaxy S20 Ultra]]<br />[[Samsung Galaxy Note 20]]
|-
| style="text-align:center; background:#EAEAFF" | 2 × 2,50 GHz<br /><span style="font-size:92%">([[ARM Cortex|ARM Cortex-76]])</span>
|-
| style="text-align:center; background:#EAEAFF" | 4 × 2,00 GHz<br /><span style="font-size:92%">([[ARM Cortex|ARM Cortex-A55]])</span>
|-
|}
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