Non-volatile random-access memory: Difference between revisions

Revision as of 18:26, 30 November 2022

Revision as of 20:44, 9 June 2023

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===Phase-change RAM===

Another solid-state technology to see more than purely experimental development is [[Phase-change RAM]], or PRAM. PRAM is based on the same storage mechanism as writable [[Compact Disk|CDs]] and [[DVD]]s, but reads them based on their changes in electrical resistance rather than changes in their optical properties. Considered a "dark horse" for some time, in 2006 [[Samsung]] announced the availability of a 512 Mbit part, considerably higher capacity than either MRAM or FeRAM. The areal density of these parts appears to be even higher than modern flash devices, the lower overall storage being due to the lack of multi-bit encoding. This announcement was followed by one from [[Intel]] and [[STMicroelectronics]], who demonstrated their own PRAM devices at the 2006 [[Intel Developer Forum]] in October.

[[Intel]] and [[Micron Technology]] had a joint venture to sell PRAM devices under the names [[3D XPoint]], Optane and QuantX, which was discontinued in July 2022.<ref>{{cite news |last1=Mann |first1=Tobias |title=Why Intel killed its Optane memory business |url=https://www.theregister.com/2022/07/29/intel_optane_memory_dead/ |access-date=2022-11-18 |work=The Register |publisher=Situation Publishing |date=2022-07-29}}</ref><ref>{{cite web |url=https://pcper.com/2017/06/how-3d-xpoint-phase-change-memory-works/ | title=HOW 3D XPOINT PHASE-CHANGE MEMORY WORKS | date=June 2, 2017 |author=Allyn Malventano | website=PC Perspective}}</ref>