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'''Active matrix''' is a type of [[addressing scheme]] used in [[flat panel display]]s. In this method of switching individual elements ([[pixel]]s), each pixel is attached to a [[transistor]] and [[capacitor]] ''actively'' maintaining the pixel state while other pixels are being addressed, in contrast with the older [[passive matrix]] technology in which each pixel must maintain its state passively, without being driven by circuitry.
Active matrix technology was invented by [[Bernard J. Lechner]] at [[RCA]],<ref>{{Cite web |url=http://www.ieee.org/about/news/2011/honors_ceremony/releases_nishizawa.html |title=IEEE Jun-ichi Nishizawa Medal |website=[[Institute of Electrical and Electronics Engineers]] (IEEE) |access-date=2013-10-17 |archive-url=https://web.archive.org/web/20130912052239/http://www.ieee.org/about/news/2011/honors_ceremony/releases_nishizawa.html |archive-date=2013-09-12 |url-status=dead }}</ref> using [[MOSFET]]s (metal–oxide–semiconductor field-effect transistors).<ref>{{cite book |last1=Castellano |first1=Joseph A. |title=Liquid Gold: The Story of Liquid Crystal Displays and the Creation of an Industry |date=2005 |publisher=[[World Scientific]] |isbn=9789812389565 |pages=
Given an ''m'' × ''n'' matrix, the number of connectors needed to address the display is ''m'' + ''n'' (just like in passive matrix technology). Each pixel is attached to a switch-device, which ''actively'' maintains the pixel state while other pixels are being addressed, also preventing [[crosstalk]] from inadvertently changing the state of an unaddressed pixel. The most common switching devices use TFTs, i.e. a [[field effect transistor|FET]] based on either the cheaper [[amorphous|non-crystalline]] [[thin-film]] [[silicon]] ([[amorphous silicon|a-Si]]), [[polycrystalline]] silicon ([[polycrystalline silicon|poly-Si]]), or [[Cadmium selenide|CdSe]] [[semiconductor]] material.
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