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{{Main|Active-pixel sensor}}
The [[NMOS logic|NMOS]] [[active-pixel sensor]] (APS) was invented by [[Olympus Corporation|Olympus]] in Japan during the mid-1980s. This was enabled by advances in MOS [[semiconductor device fabrication]], with [[MOSFET scaling]] reaching smaller [[List of semiconductor scale examples|micron and then sub-micron]] levels.<ref name=fossum93/><ref>{{cite journal |last1=Fossum |first1=Eric R. |author1-link=Eric Fossum |title=Active Pixel Sensors |website=[[Semantic Scholar]] |year=2007 |s2cid=18831792 |url=http://pdfs.semanticscholar.org/f510/d40cfe0556392bb2d34981f7158327dec169.pdf |archive-url=https://web.archive.org/web/20190309065505/http://pdfs.semanticscholar.org/f510/d40cfe0556392bb2d34981f7158327dec169.pdf |url-status=dead |archive-date=9 March 2019 |access-date=8 October 2019}}</ref> The first NMOS APS was fabricated by Tsutomu Nakamura's team at Olympus in 1985.<ref>{{cite journal |last1=Matsumoto |first1=Kazuya |last2=Nakamura |first2=Tsutomu |last3=Yusa |first3=Atsushi |last4=Nagai |first4=Shohei |display-authors=1|date=1985 |title=A new MOS phototransistor operating in a non-destructive readout mode |journal=Japanese Journal of Applied Physics |volume=24 |issue=5A |page=L323|doi=10.1143/JJAP.24.L323 |bibcode=1985JaJAP..24L.323M |s2cid=108450116 }}</ref> The [[CMOS]] active-pixel sensor (CMOS sensor) was later improved by a group of scientists at the [[NASA]] [[Jet Propulsion Laboratory]] in 1993.<ref name="Fossum2014"/> By 2007, sales of CMOS sensors
===Other image sensors===
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