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The EBSD detector is located within the specimen chamber of the SEM at an angle of approximately 90° to the pole piece. The EBSD detector is typically a phosphor screen that is excited by the backscattered electrons.<ref name=":45" /> The screen is coupled to lens which focuses the image from the phosphor screen onto a [[charge-coupled device]] (CCD) or c[[CMOS|omplementary metal–oxide–semiconductor]] (CMOS) camera.<ref>{{Cite journal |last1=Goulden |first1=J. |last2=Trimby |first2=P. |last3=Bewick |first3=A. |date=2018-08-01 |title=The Benefits and Applications of a CMOS-based EBSD Detector |journal=Microscopy and Microanalysis |volume=24 |issue=S1 |pages=1128–1129 |doi=10.1017/s1431927618006128 |bibcode=2018MiMic..24S1128G |s2cid=139967518 |doi-access=free }}</ref>
In this configuration, as the backscattered electrons leave the sample, they interact with the [[Electric potential|Coulomb potential]] and also lose energy due to [[inelastic scattering]] leading to a range of scattering angles (θ<sub>hkl</sub>).<ref name=":45">{{Citation |last=Randle |first=Valerie |title=Theoretical Framework for Electron Backscatter Diffraction |date=2000 |work=Electron Backscatter Diffraction in Materials Science |pages=19–30 |editor-last=Schwartz |editor-first=Adam J. |place=Boston, MA |publisher=Springer US |doi=10.1007/978-1-4757-3205-4_2 |isbn=978-1-4757-3205-4 |editor2-last=Kumar |editor2-first=Mukul |editor3-last=Adams |editor3-first=Brent L. }}</ref><ref name=":19">{{Citation |last1=Eades |first1=Alwyn |title=Energy Filtering in EBSD |date=2009 |work=Electron Backscatter Diffraction in Materials Science |pages=53–63 |editor-last=Schwartz |editor-first=Adam J. |place=Boston, MA |doi=10.1007/978-0-387-88136-2_4 |isbn=978-0-387-88136-2 |last2=Deal |first2=Andrew |last3=Bhattacharyya |first3=Abhishek |last4=Hooghan |first4=Tejpal |editor2-last=Kumar |editor2-first=Mukul |editor3-last=Adams |editor3-first=Brent L. |editor4-last=Field |editor4-first=David P. }}</ref> The backscattered electrons form [[Kikuchi lines (physics)|Kikuchi lines]] – having different intensities – on an electron-sensitive flat film/screen (commonly phosphor), gathered to form a Kikuchi band. These Kikuchi lines are the trace of a hyperbola formed by the intersection of [[Walther Kossel|Kossel]] cones with the plane of the phosphor screen. The width of a Kikuchi band is related to the scattering angles and, thus, to the distance d<sub>hkl</sub> between lattice planes with Miller indexes h, k, and l.<ref name=":20">{{Cite journal |last1=Wilkinson |first1=Angus J. |last2=Britton |first2=T. Ben. |date=2012 |title=Strains, planes, and EBSD in materials science |journal=Materials Today |volume=15 |issue=9 |pages=366–376 |doi=10.1016/S1369-7021(12)70163-3 |doi-access=free }}</ref><ref>{{Cite journal |last1=Sawatzki |first1=Simon |last2=Woodcock |first2=Thomas G. |last3=Güth |first3=Konrad |last4=Müller |first4=Karl-Hartmut |last5=Gutfleisch |first5=Oliver |date=2015 |title=Calculation of remanence and degree of texture from EBSD orientation histograms and XRD rocking curves in Nd–Fe–B sintered magnets |journal=Journal of Magnetism and Magnetic Materials |volume=382 |pages=219–224 |doi=10.1016/j.jmmm.2015.01.046 |bibcode=2015JMMM..382..219S }}</ref> These Kikuchi lines and patterns were named after [[Seishi Kikuchi]], who, together with
The systematically arranged Kikuchi bands, which have a range of intensity along their width, intersect around the centre of the regions of interest (ROI), describing the probed volume crystallography.<ref>{{Cite journal |date=1954|title=High-angle Kikuchi patterns |journal=Proceedings of the Royal Society of London. Series A. Mathematical and Physical Sciences |volume=221 |issue=1145 |pages=224–242 |doi=10.1098/rspa.1954.0017 |bibcode=1954RSPSA.221..224A |last1=Alam |first1=M. N. |last2=Blackman |first2=M. |last3=Pashley |first3=D. W. |s2cid=97131764 }}</ref> These bands and their intersections form what is known as Kikuchi patterns or electron backscatter patterns (EBSPs). To improve contrast, the patterns’ background is corrected by removing anisotropic/inelastic scattering using static background correction or dynamic background correction.<ref>{{Cite journal |last1=Dingley |first1=D J |last2=Wright |first2=S I |last3=Nowell |first3=M M |date=August 2005 |title=Dynamic Background Correction of Electron Backscatter Diffraction Patterns |journal=Microscopy and Microanalysis |volume=11 |issue=S02 |doi=10.1017/S1431927605506676 |s2cid=137658758 |doi-access=free }}</ref>
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