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===MOS RAM===
In 1957, Frosch and Derick were able to manufacture the first silicon dioxide field effect transistors at Bell Labs, the first transistors in which drain and source were adjacent at the surface.<ref>{{Cite journal |last=Frosch |first=C. J. |last2=Derick |first2=L |date=1957 |title=Surface Protection and Selective Masking during Diffusion in Silicon |url=https://iopscience.iop.org/article/10.1149/1.2428650 |journal=Journal of The Electrochemical Society |language=en |volume=104 |issue=9 |pages=547 |doi=10.1149/1.2428650}}</ref> Subsequently, a team demonstrating a working [[MOSFET]] at Bell Labs 1960.<ref>{{Cite journal |last=KAHNG |first=D. |date=1961 |title=Silicon-Silicon Dioxide Surface Device |url=https://doi.org/10.1142/9789814503464_0076 |journal=Technical Memorandum of Bell Laboratories |pages=583–596 |doi=10.1142/9789814503464_0076 |isbn=978-981-02-0209-5}}</ref><ref>{{Cite book |last=Lojek |first=Bo |title=History of Semiconductor Engineering |date=2007 |publisher=Springer-Verlag Berlin Heidelberg |isbn=978-3-540-34258-8 |___location=Berlin, Heidelberg |page=321}}</ref>
The invention of the [[MOSFET]] (metal–oxide–semiconductor field-effect transistor), also known as the MOS transistor, by [[Mohamed M. Atalla]] and [[Dawon Kahng]] at [[Bell Labs]] in 1959,<ref name="computerhistory">{{cite journal |url=https://www.computerhistory.org/siliconengine/metal-oxide-semiconductor-mos-transistor-demonstrated/ |title=1960 – Metal Oxide Semiconductor (MOS) Transistor Demonstrated |journal=The Silicon Engine |publisher=[[Computer History Museum]]}}</ref> led to the development of [[metal–oxide–semiconductor]] (MOS) memory by John Schmidt at [[Fairchild Semiconductor]] in 1964.<ref name="computerhistory1970"/><ref>{{Cite book |url=https://books.google.com/books?id=kG4rAQAAIAAJ&q=John+Schmidt |title=Solid State Design – Vol. 6 |date=1965 |publisher=Horizon House}}</ref> In addition to higher speeds, MOS [[semiconductor memory]] was cheaper and consumed less power than magnetic core memory.<ref name="computerhistory1970"/> The development of [[silicon-gate]] [[MOS integrated circuit]] (MOS IC) technology by [[Federico Faggin]] at Fairchild in 1968 enabled the production of MOS [[memory chip]]s.<ref>{{cite web |title=1968: Silicon Gate Technology Developed for ICs |url=https://www.computerhistory.org/siliconengine/silicon-gate-technology-developed-for-ics/ |website=[[Computer History Museum]] |access-date=10 August 2019}}</ref> MOS memory overtook magnetic core memory as the dominant memory technology in the early 1970s.<ref name="computerhistory1970"/>▼
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An integrated bipolar [[static random-access memory]] (SRAM) was invented by Robert H. Norman at [[Fairchild Semiconductor]] in 1963.<ref>{{cite patent
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