Single-electron transistor: Difference between revisions

Revision as of 13:46, 6 April 2024

Revision as of 02:12, 14 September 2024

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At zero temperatures, only transitions with negative free energy are allowed: <math>\Delta F_{\rm S} < 0</math> or <math>\Delta F_{\rm D} < 0</math>. These conditions can be used to find areas of stability in the plane <math>V_{\rm bias} - V_{\rm G}.</math>

With increasing voltage at the gate electrode, when the supply voltage is maintaintedmaintained below the voltage of the Coulomb blockade (i.e. <math>V_{\rm bias} < \tfrac{e}{C_{\rm S} + C_{\rm D}}</math>), the drain output current will oscillate with a period <math>\tfrac{e}{C_{\rm S} + C_{\rm D}}.</math> These areas correspond to failures in the field of stability. The oscillations of the tunnelling current occur in time, and the oscillations in two series-connected junctions have a periodicity in the gate control voltage. The thermal broadening of the oscillations increases to a large extent with increasing temperature.

=== Temperature dependence ===