Random-access memory: Difference between revisions

Revision as of 02:21, 30 September 2024

Revision as of 04:36, 3 October 2024

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{{Distinguish|Random Access Memories|Random-access machine}}

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{{Memory types}}

[[File:Electronic Memory.jpg|thumb| A 64 bit memory chip die, the SP95 Phase 2 Buffer Memory produced at IBM mid 60s, versus [[Magnetic-core memory|memory core iron rings]]]]

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Early computers used [[relay]]s, [[mechanical counter]]s<ref>{{cite web|url=http://www-03.ibm.com/ibm/history/reference/faq_0000000011.html|title=IBM Archives -- FAQ's for Products and Services|work=ibm.com|url-status=dead|archive-url=https://web.archive.org/web/20121023184527/http://www-03.ibm.com/ibm/history/reference/faq_0000000011.html|archive-date=2012-10-23}}</ref> or [[Delay-line memory|delay lines]] for main memory functions. Ultrasonic delay lines were [[bit-serial architecture|serial devices]] which could only reproduce data in the order it was written. [[Drum memory]] could be expanded at relatively low cost but efficient retrieval of memory items requires knowledge of the physical layout of the drum to optimize speed. Latches built out of [[triode vacuum tube]]s, and later, out of [[discrete transistor]]s, were used for smaller and faster memories such as [[Hardware register|registers]]. Such registers were relatively large and too costly to use for large amounts of data; generally only a few dozen or few hundred bits of such memory could be provided.

The first practical form of random-access memory was the [[Williams tube]]. It stored data as electrically charged spots on the face of a [[cathode-ray tube]]. Since the electron beam of the CRT could read and write the spots on the tube in any order, memory was random access. The capacity of the Williams tube was a few hundred to around a thousand bits, but it was much smaller, faster, and more power-efficient than using individual vacuum tube latches. Developed at the [[Victoria University of Manchester|University of Manchester]] in England, the Williams tube provided the medium on which the first electronically stored program was implemented in the [[Manchester Baby]] computer, which first successfully ran a program on 21 June, 1948.<ref>{{Citation | last = Napper | first = Brian | title = Computer 50: The University of Manchester Celebrates the Birth of the Modern Computer | url = http://www.computer50.org/ | access-date = 26 May 2012 | url-status = dead | archive-url = https://web.archive.org/web/20120504133240/http://www.computer50.org/ | archive-date = 4 May 2012 }}</ref> In fact, rather than the Williams tube memory being designed for the Baby, the Baby was a [[testbed]] to demonstrate the reliability of the memory.<ref>{{Citation |last1=Williams |first1=F. C. |last2=Kilburn |first2=T. |title=Electronic Digital Computers |journal=Nature |volume=162 |pages=487 |date=Sep 1948 |doi=10.1038/162487a0 |issue=4117 |postscript=. |bibcode=1948Natur.162..487W |s2cid=4110351|doi-access=free }} Reprinted in ''The Origins of Digital Computers''.</ref><ref>{{Citation |last1=Williams |first1=F. C. |last2=Kilburn |first2=T. |last3=Tootill |first3=G. C. |title=Universal High-Speed Digital Computers: A Small-Scale Experimental Machine |url=http://www.computer50.org/kgill/mark1/ssem.html |journal=Proc. IEE |date=Feb 1951 |volume=98 |issue=61 |pages=13–28 |postscript=. |doi=10.1049/pi-2.1951.0004 |url-status=dead |archive-url=https://web.archive.org/web/20131117101730/http://www.computer50.org/kgill/mark1/ssem.html |archive-date=2013-11-17}}</ref><!--[[User:Kvng/RTH]]-->

[[Magnetic-core memory]] was invented in 1947 and developed up until the mid-1970s. It became a widespread form of random-access memory, relying on an array of magnetized rings. By changing the sense of each ring's magnetization, data could be stored with one bit stored per ring. Since every ring had a combination of address wires to select and read or write it, access to any memory ___location in any sequence was possible. Magnetic core memory was the standard form of [[computer memory]] system until displaced by [[solid-state electronics|solid-state]] [[MOSFET|MOS]] ([[metal–oxide–silicon]]) [[semiconductor memory]] in [[integrated circuit]]s (ICs) during the early 1970s.<ref name="computerhistory1970"/>

Prior to the development of integrated [[read-only memory]] (ROM) circuits, ''permanent'' (or ''read-only'') random-access memory was often constructed using [[Diode matrix|diode matrices]] driven by [[address decoder]]s, or specially wound [[core rope memory]] planes.{{Citation needed|reason=This paragraph needs a citation.|date=December 2016}}

[[Semiconductor memory]] beganappeared in the 1960s with bipolar memory, which used [[bipolar transistor]]s. Although it was faster, it could not compete with the lower price of magnetic core memory.<ref name="computerhistory1966"/><!--[[User:Kvng/RTH]]-->

===MOS RAM===