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In 1955, [[Ian Munro Ross]] filed a patent for a [[FeFET]] or MFSFET. Its structure was like that of a modern inversion channel MOSFET, but ferroelectric material was used as a dielectric/insulator instead of oxide. He envisioned it as a form of memory, years before the [[floating gate MOSFET]]. In February 1957, [[J. Torkel Wallmark|John Wallmark]] filed a patent for [[thin-film transistor|FET]] in which [[germanium monoxide]] was used as a gate dielectric, but he didn't pursue the idea. In his other patent filed the same year he described a [[multigate device|double gate]] FET. In March 1957, in his laboratory notebook, Ernesto Labate, a research scientist at [[Bell Labs]], conceived of a device similar to the later proposed MOSFET, although Labate's device didn't explicitly use [[silicon dioxide]] as an insulator.<ref>{{cite book |last1=Lojek |first1=Bo |title=History of Semiconductor Engineering |date=2007 |publisher=Springer Science & Business Media |isbn=978-3-540-34258-8 |page=324}}</ref><ref>{{cite book | author=Stefan Ferdinand Müller | title=Development of HfO2-Based Ferroelectric Memories for Future CMOS Technology Nodes | year=2016 | publisher=BoD – Books on Demand | isbn=978-3-7392-4894-3}}</ref><ref>{{cite book |author1=B.G Lowe |author2=R.A. Sareen | title=Semiconductor X-Ray Detectors | date=2013 |publisher=CRC Press | isbn=978-1-4665-5401-6 }}</ref><ref name="Bassett22">{{cite book |last1=Bassett |first1=Ross Knox |title=To the Digital Age: Research Labs, Start-up Companies, and the Rise of MOS Technology |date=2007 |publisher=Johns Hopkins University Press |isbn=978-0-8018-8639-3 |page=22 |url=https://books.google.com/books?id=UUbB3d2UnaAC&pg=PA22}}</ref>
In 1955, [[Carl Frosch]] and Lincoln Derrick accidentally grew a layer of silicon dioxide over the silicon wafer, for which they observed [[surface passivation]] effects.<ref name=":0">{{Cite journal |last1=Huff |first1=Howard |last2=Riordan |first2=Michael |date=2007-09-01 |title=Frosch and Derick: Fifty Years Later (Foreword) |url=https://iopscience.iop.org/article/10.1149/2.F02073IF |journal=The Electrochemical Society Interface |volume=16 |issue=3 |pages=29 |doi=10.1149/2.F02073IF |issn=1064-8208}}</ref><ref>{{Cite patent|number=US2802760A|title=Oxidation of semiconductive surfaces for controlled diffusion|gdate=1957-08-13|invent1=Lincoln|invent2=Frosch|inventor1-first=Derick|inventor2-first=Carl J.|url=https://patents.google.com/patent/US2802760A}}</ref> By 1957 Frosch and Derrick, using masking and predeposition, were able to manufacture silicon dioxide transistors and showed that silicon dioxide insulated, protected silicon wafers and prevented dopants from diffusing into the wafer.<ref name=":0" /><ref>{{Cite journal |last1=Frosch |first1=C. J. |last2=Derick |first2=L |date=1957 |title=Surface Protection and Selective Masking during Diffusion in Silicon |url=https://iopscience.iop.org/article/10.1149/1.2428650 |journal=Journal of the Electrochemical Society |language=en |volume=104 |issue=9 |pages=547 |doi=10.1149/1.2428650}}</ref> J.R. Ligenza and W.G. Spitzer studied the mechanism of thermally grown oxides and fabricated a high quality Si/[[Silicon dioxide|SiO<sub>2</sub>]] stack in 1960.<ref>{{Cite journal |last1=Ligenza |first1=J. R. |last2=Spitzer |first2=W. G. |date=1960-07-01 |title=The mechanisms for silicon oxidation in steam and oxygen |url=https://linkinghub.elsevier.com/retrieve/pii/0022369760902195 |journal=Journal of Physics and Chemistry of Solids |volume=14 |pages=131–136 |doi=10.1016/0022-3697(60)90219-5 |bibcode=1960JPCS...14..131L |issn=0022-3697}}</ref><ref name="Deal">{{cite book |last1=Deal |first1=Bruce E. |title=Silicon materials science and technology |date=1998 |publisher=[[The Electrochemical Society]] |isbn=978-1566771931 |page=183 |chapter=Highlights Of Silicon Thermal Oxidation Technology |chapter-url=https://books.google.com/books?id=cr8FPGkiRS0C&pg=PA183}}</ref><ref>{{cite book |last1=Lojek |first1=Bo |title=History of Semiconductor Engineering |date=2007 |publisher=Springer Science & Business Media |isbn=978-3540342588 |page=322}}</ref>▼
===Metal-oxide-semiconductor FET (MOSFET)===
{{Main|MOSFET}}
▲In 1955, [[Carl Frosch]] and Lincoln Derrick accidentally grew a layer of silicon dioxide over the silicon wafer, for which they observed [[surface passivation]] effects.<ref name=":0">{{Cite journal |last1=Huff |first1=Howard |last2=Riordan |first2=Michael |date=2007-09-01 |title=Frosch and Derick: Fifty Years Later (Foreword) |url=https://iopscience.iop.org/article/10.1149/2.F02073IF |journal=The Electrochemical Society Interface |volume=16 |issue=3 |pages=29 |doi=10.1149/2.F02073IF |issn=1064-8208}}</ref><ref>{{Cite patent|number=US2802760A|title=Oxidation of semiconductive surfaces for controlled diffusion|gdate=1957-08-13|invent1=Lincoln|invent2=Frosch|inventor1-first=Derick|inventor2-first=Carl J.|url=https://patents.google.com/patent/US2802760A}}</ref> By 1957 Frosch and Derrick, using masking and predeposition, were able to manufacture silicon dioxide transistors and showed that silicon dioxide insulated, protected silicon wafers and prevented dopants from diffusing into the wafer.<ref name=":0" /><ref>{{Cite journal |last1=Frosch |first1=C. J. |last2=Derick |first2=L |date=1957 |title=Surface Protection and Selective Masking during Diffusion in Silicon |url=https://iopscience.iop.org/article/10.1149/1.2428650 |journal=Journal of the Electrochemical Society |language=en |volume=104 |issue=9 |pages=547 |doi=10.1149/1.2428650}}</ref> J.R. Ligenza and W.G. Spitzer studied the mechanism of thermally grown oxides and fabricated a high quality Si/[[Silicon dioxide|SiO<sub>2</sub>]] stack in 1960.<ref>{{Cite journal |last1=Ligenza |first1=J. R. |last2=Spitzer |first2=W. G. |date=1960-07-01 |title=The mechanisms for silicon oxidation in steam and oxygen |url=https://linkinghub.elsevier.com/retrieve/pii/0022369760902195 |journal=Journal of Physics and Chemistry of Solids |volume=14 |pages=131–136 |doi=10.1016/0022-3697(60)90219-5 |bibcode=1960JPCS...14..131L |issn=0022-3697}}</ref><ref name="Deal">{{cite book |last1=Deal |first1=Bruce E. |title=Silicon materials science and technology |date=1998 |publisher=[[The Electrochemical Society]] |isbn=978-1566771931 |page=183 |chapter=Highlights Of Silicon Thermal Oxidation Technology |chapter-url=https://books.google.com/books?id=cr8FPGkiRS0C&pg=PA183}}</ref><ref>{{cite book |last1=Lojek |first1=Bo |title=History of Semiconductor Engineering |date=2007 |publisher=Springer Science & Business Media |isbn=978-3540342588 |page=322}}</ref>
Following this research, [[Mohamed Atalla]] and [[Dawon Kahng]] proposed a silicon MOS transistor in 1959<ref name="Bassett222">{{cite book |last1=Bassett |first1=Ross Knox |url=https://books.google.com/books?id=UUbB3d2UnaAC&pg=PA22 |title=To the Digital Age: Research Labs, Start-up Companies, and the Rise of MOS Technology |date=2007 |publisher=[[Johns Hopkins University Press]] |isbn=978-0-8018-8639-3 |pages=22–23}}</ref> and successfully demonstrated a working MOS device with their Bell Labs team in 1960.<ref>{{cite journal |last1=Atalla |first1=M. |author1-link=Mohamed Atalla |last2=Kahng |first2=D. |author2-link=Dawon Kahng |date=1960 |title=Silicon-silicon dioxide field induced surface devices |journal=IRE-AIEE Solid State Device Research Conference}}</ref><ref>{{cite journal |title=1960 – Metal Oxide Semiconductor (MOS) Transistor Demonstrated |url=https://www.computerhistory.org/siliconengine/metal-oxide-semiconductor-mos-transistor-demonstrated/ |journal=The Silicon Engine |publisher=[[Computer History Museum]] |access-date=2023-01-16}}</ref> Their team included E. E. LaBate and E. I. Povilonis who fabricated the device; M. O. Thurston, L. A. D’Asaro, and J. R. Ligenza who developed the diffusion processes, and H. K. Gummel and R. Lindner who characterized the device.<ref>{{Cite journal |last=KAHNG |first=D. |date=1961 |title=Silicon-Silicon Dioxide Surface Device |url=https://doi.org/10.1142/9789814503464_0076 |journal=Technical Memorandum of Bell Laboratories|pages=583–596 |doi=10.1142/9789814503464_0076 |isbn=978-981-02-0209-5 }}</ref><ref>{{Cite book |last=Lojek |first=Bo |title=History of Semiconductor Engineering |date=2007 |publisher=Springer-Verlag Berlin Heidelberg |isbn=978-3-540-34258-8 |___location=Berlin, Heidelberg |page=321}}</ref>
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