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SAQP has advantages in two-dimensional 28 nm pitch routing (followed by two selective etch cut/trim steps), compared to EUV, due to the illumination limitations of the latter.<ref>[https://www.linkedin.com/pulse/application-specific-lithography-28-nm-pitch-routing-frederick-chen Application-Specific Lithography - 28 nm Pitch Two-Dimensional Routing]</ref>
==Multi-Spacer Pitch Reduction==
Iterations of deposition followed by etching or controlled etchback of multilayers can result in substantial pitch reduction beyond SAQP.<ref>[https://chentfred.substack.com/p/variable-cell-height-track-pitch Variable Cell Height Track Pitch Scaling Beyond Lithography]]</ref>
==Directed self-assembly (DSA)==
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