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Hence, multiple patterning for EUV at wider design rules is presently a practical consideration for both yield and throughput reasons.
In 2025, it was revealed that random 36 nm via patterns required EUV double patterning to avoid excessive doses, yet DUV double patterning would have been sufficient.<ref>C. Zahlten, Proc. SPIE 13424, 134240Z (2025).</ref><ref>[https://www.youtube.com/watch?v=CWrDaUvTxIE Stochastic EUV Exposure of 36 nm Via]</ref>
==References==
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