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In textbooks, channel length modulation in [[MOSFET#Modes of operation|active mode]] usually is described using the Shichman–Hodges model, accurate only for old technology:<ref>{{cite web |url=http://www.nanodottek.com/NDT14_08_2007.pdf |title=NanoDotTek Report NDT14-08-2007, 12 August 2007 |publisher=NanoDotTek |access-date=23 March 2015 |url-status=usurped |archiveurl=https://web.archive.org/web/20120617082916/http://www.nanodottek.com/NDT14_08_2007.pdf |archivedate=2012-06-17}}</ref>
where <math>I_\text{D}</math> = drain current, <math> K'_n </math> =
technology parameter sometimes called the transconductance coefficient, ''W, L'' = MOSFET width and length, <math>V_\text{GS}</math> = gate-to-source voltage, <math>V_\text{th}</math> = [[threshold voltage]], <math>V_\text{DS}</math> = drain-to-source voltage, <math>V_\text{DS,sat} = V_\text{GS} - V_\text{th}</math>, and λ = '''channel-length modulation''' parameter.
In the classic Shichman–Hodges model, <math>V_\text{th}</math> is a device constant, which reflects the reality of transistors with long channels.
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