Field-effect transistor: Difference between revisions

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The '''field-effect transistor''' ('''FET''') is a type of [[transistor]] that uses an [[electric field]] to control the [[Electric current|current]] through a [[semiconductor]]. It comes in two types: [[JFET|junction FET]] (JFET) and [[MOSFET|metal–oxide–semiconductor FET]] (MOSFET). FETs have three terminals: ''source'', ''gate'', and ''drain''. FETs control the current by the application of a [[voltage]] to the gate, which in turn alters the [[Electrical resistivity and conductivity|conductivity]] between the drain and source.
 
FETs are also known as '''unipolar transistors''' since they involve single-carrier-type operation. That is, FETs use either [[electron]]s (n-channel) or [[hole (semiconductor)|hole]]s (p-channel) as [[charge carrier]]s in their operation, but not both. Many different types of field effect transistors exist. Field effect transistors generally display very [[High impedance|high input impedance]] at low frequencies. The most widely used field-effect transistor is the [[MOSFET]] (metal–oxide–semiconductor field-effect transistor).
 
==History==